LBSS4240LT1G - описание и поиск аналогов

LESHAN RADIO COMPANY, LTD. General Purpose Transistors 40V,2A Low VCE(sat) NPN Silicon FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation LBSS4240LT1G Replacement for SOT89/SOT223 standard packaged S-LBSS4240LT1G transistors. 3 We declare that the material of product complian

LBSS4240LT1G S-LBSS4240LT1G General Purpose Transistors NPN Silicon 1. FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring SOT23

LBSS4250Y3T1G S-LBSS4250Y3T1G 1 NPN 2.0A 50V Middle Power Transistor 2 3 1. FEATURES Suitable for Middle Power Driver SOT89 Complementary NPN Types Low VCE(sat) We declare that the material of product compliance with 2 RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring 1 unique site and control change requireme

LBSS4350SY3T1G S-LBSS4350SY3T1G NPN TRANSISTOR 1 2 1. FEATURES 3 Low collector-to-emitter saturation voltage. Fast switching speed. SOT89 Large current capacity and wide ASO. We declare that the material of product compliance with RoHS requirements and Halogen Free. 2 S- prefix for automotive and other applications requiring unique site and control chang