LBSS5240LT1G - описание и поиск аналогов

LESHAN RADIO COMPANY, LTD. General Purpose Transistors -40V,-2A Low VCE(sat) PNP Silicon FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat LBSS5240LT1G generation S-LBSS5240LT1G Replacement for SOT89/SOT223 standard packaged transistors. 3 We declare that the material of product complian

LESHAN RADIO COMPANY, LTD. General Purpose Transistors -40V,-2A Low VCE(sat) PNP Silicon FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat LBSS5240LT1G generation S-LBSS5240LT1G Replacement for SOT89/SOT223 standard packaged transistors. 3 We declare that the material of product complian

LBSS5250Y3T1G S-LBSS5250Y3T1G Midium Power PNP Transistors 1 2 1. FEATURES 3 Low saturation voltage, typically High speed switching SOT89 We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring 2 unique site and control change requirements; AEC-Q101 qualified and PPA

LBSS5350SY3T1G S-LBSS5350SY3T1G PNP TRANSISTOR 1 2 1. FEATURES 3 Low collector-to-emitter saturation voltage. Fast switching speed. SOT89 Large current capacity and wide ASO. We declare that the material of product compliance with RoHS requirements and Halogen Free. 2 S- prefix for automotive and other applications requiring unique site and control chang