LBC856BLT1G - описание и поиск аналогов

 

LBC856BLT1G. Аналоги и основные параметры

Наименование производителя: LBC856BLT1G

Маркировка: 3B

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.225 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 220

Корпус транзистора: SOT23

 Аналоги (замена) для LBC856BLT1G

- подборⓘ биполярного транзистора по параметрам

 

LBC856BLT1G даташит

 ..1. Size:234K  lrc
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LBC856BLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch

 ..2. Size:235K  lrc
lbc856blt1g.pdfpdf_icon

LBC856BLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 LBC857CLT1G ESD Rating Human Body Model >4000 V S-LBC857CLT1G ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control

 ..3. Size:234K  lrc
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LBC856BLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch

 ..4. Size:158K  lrc
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LBC856BLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1 Unique Sit

Другие транзисторы: LBSS5240LT1G, LH8050QLT1G, LH8550QLT1G, LMBTH10LT1G, LMBTH10QLT1G, LMBTH10WT1G, LBC856ALT1G, LBC856BDW1T1G, 8550, LBC856BWT1G, LBC857ALT1G, LBC857AWT1G, LBC857BDW1T1G, LBC857BLT1G, LBC857BTT1G, LBC857BWT1G, LBC857CDW1T1G

 

 

 

 

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