LBC858BWT1G - описание и поиск аналогов

 

LBC858BWT1G. Аналоги и основные параметры

Наименование производителя: LBC858BWT1G

Маркировка: 3K

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 30 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 220

Корпус транзистора: SC70

 Аналоги (замена) для LBC858BWT1G

- подборⓘ биполярного транзистора по параметрам

 

LBC858BWT1G даташит

 ..1. Size:278K  lrc
lbc858bwt1g.pdfpdf_icon

LBC858BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. Features S-LBC856AWT1G, BWT1G We declare that the material of product c

 ..2. Size:254K  lrc
lbc856awt1g lbc856bwt1g lbc857awt1g lbc857bwt1g lbc857cwt1g lbc858awt1g lbc858bwt1g lbc858cwt1g.pdfpdf_icon

LBC858BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product

 7.1. Size:159K  lrc
lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdfpdf_icon

LBC858BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 7.2. Size:234K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc857clt1g lbc858alt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859blt1g lbc859clt1g.pdfpdf_icon

LBC858BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch

Другие транзисторы: LBC857BTT1G, LBC857BWT1G, LBC857CDW1T1G, LBC857CLT1G, LBC857CWT1G, LBC858ALT1G, LBC858BDW1T1G, LBC858BLT1G, 2SC5198, LBC858CDW1T1G, LBC858CLT1G, LMBTA05LT1G, LMBTA06LT1G, LMBTA13LT1G, LMBTA14LT1G, LMBTA42LT1G, LMBTA44LT1G

 

 

 

 

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