Биполярный транзистор LMBTA55LT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: LMBTA55LT1G
Маркировка: 2H
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT23
Аналоги (замена) для LMBTA55LT1G
LMBTA55LT1G Datasheet (PDF)
lmbta55lt1g lmbta56lt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsPNP SiliconLMBTA55LT1GWe declare that the material of productLMBTA56LT1Gcompliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring S-LMBTA55LT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBTA56LT1GQualified and PPAP Capable.MAXIMUM RATINGS3ValueRating Symbol LMBTA55 LMBTA56 Uni
lmbta55lt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsPNP SiliconLMBTA55LT1GWe declare that the material of productLMBTA56LT1Gcompliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring S-LMBTA55LT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBTA56LT1GQualified and PPAP Capable.MAXIMUM RATINGS3ValueRating Symbol LMBTA55 LMBTA56 Uni
lmbta56wt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsPNP SiliconLMBTA55WT1GLMBTA56WT1GWe declare that the material of productcompliance with RoHS requirements.S-LMBTA55WT1GS- Prefix for Automotive and Other Applications Requiring S-LMBTA56WT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAXIMUM RATINGSValueRating Symbol LMBTA55 LMBTA56 U
lmbta56lt1g lmbta56lt3g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsPNP SiliconLMBTA56LT1GFEATURESS-LMBTA56LT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1011 Qualified and PPAP Capable.2SOT23DEVICE MARKING AND ORDERING
lmbta56lt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsPNP SiliconLMBTA56LT1GFEATURESS-LMBTA56LT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1011 Qualified and PPAP Capable.2SOT23DEVICE MARKING AND ORDERING
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: LMUN2134LT1G | BC291B | 2SC820 | 2SC833N | 2SC941Y | BC278 | KT630E
History: LMUN2134LT1G | BC291B | 2SC820 | 2SC833N | 2SC941Y | BC278 | KT630E
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050