Биполярный транзистор LMBTA56LT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: LMBTA56LT1G
Маркировка: 2GM
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT23
Аналоги (замена) для LMBTA56LT1G
LMBTA56LT1G Datasheet (PDF)
lmbta55lt1g lmbta56lt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsPNP SiliconLMBTA55LT1GWe declare that the material of productLMBTA56LT1Gcompliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring S-LMBTA55LT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBTA56LT1GQualified and PPAP Capable.MAXIMUM RATINGS3ValueRating Symbol LMBTA55 LMBTA56 Uni
lmbta56lt1g lmbta56lt3g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsPNP SiliconLMBTA56LT1GFEATURESS-LMBTA56LT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1011 Qualified and PPAP Capable.2SOT23DEVICE MARKING AND ORDERING
lmbta56lt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsPNP SiliconLMBTA56LT1GFEATURESS-LMBTA56LT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1011 Qualified and PPAP Capable.2SOT23DEVICE MARKING AND ORDERING
lmbta56wt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsPNP SiliconLMBTA55WT1GLMBTA56WT1GWe declare that the material of productcompliance with RoHS requirements.S-LMBTA55WT1GS- Prefix for Automotive and Other Applications Requiring S-LMBTA56WT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAXIMUM RATINGSValueRating Symbol LMBTA55 LMBTA56 U
lmbta55lt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsPNP SiliconLMBTA55LT1GWe declare that the material of productLMBTA56LT1Gcompliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring S-LMBTA55LT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBTA56LT1GQualified and PPAP Capable.MAXIMUM RATINGS3ValueRating Symbol LMBTA55 LMBTA56 Uni
lmbta92lt1g lmbta93lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme
lmbta44lt1g.pdf
LESHAN RADIO COMPANY, LTD.LMBTA44LT1G LMBTA44LT1GS-LMBTA44LT1GNPN EPITAXIAL PLANAR TRANSISTORWe declare that the material of productcompliance with RoHS requirements.3DescriptionThe LMBTA44LT1G is designed for application 1that requires high voltage.2Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mASOT 23 Complementary to LMBTA94LT1G S- Prefix
lmbta06lt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsFEATURESLMBTA05LT1G We declare that the material of productcompliance with RoHS requirements.LMBTA06LT1G S- Prefix for Automotive and Other Applications Requiring S-LMBTA05LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA06LT1GMAXIMUM RATINGSValue3Rating Symbol LMBTA05 LMBT
lmbta05lt1g lmbta06lt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsFEATURESLMBTA05LT1G We declare that the material of productcompliance with RoHS requirements.LMBTA06LT1G S- Prefix for Automotive and Other Applications Requiring S-LMBTA05LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA06LT1GMAXIMUM RATINGSValue3Rating Symbol LMBTA05 LMBT
lmbta64lt1g.pdf
LESHAN RADIO COMPANY, LTD.Darlington TransistorsPNP SiliconWe declare that the material of product LMBTA63LT1Gcompliance with RoHS requirements.LMBTA64LT1GMAXIMUM RATINGSRating Symbol Value Unit3CollectorEmitter Voltage VCES 30 Vdc1CollectorBase Voltage VCBO 30 Vdc2EmitterBase Voltage VEBO 10 VdcCollector Current Continuous IC 500 mAdcCASE
lmbta42lt1g lmbta42lt3g lmbta43lt1g lmbta43lt3g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage Transistors We declare that the material of productcompliance with RoHS requirements.LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1GSite and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping S-LMB
lmbta05lt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsLMBTA05LT1GFEATURES We declare that the material of productLMBTA06LT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring S-LMBTA05LT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBTA06LT1GQualified and PPAP Capable.MAXIMUM RATINGSValue3Rating Symbol LMBTA05 LMBTA0
lmbta06ut1g.pdf
LESHAN RADIO COMPANY, LTD.Dual Driver TransistorsNPN/PNP Duals LMBTA05UT1GLMBTA06UT1GFEATURES We declare that the material of product S-LMBTA05UT1Gcompliance with RoHS requirements.S-LMBTA06UT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.MAXIMUM RATINGSValueRating Sy
lmbta92lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme
lmbta42lt1g lmbta43lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage Transistors We declare that the material of productcompliance with RoHS requirements.LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1GSite and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping S-LMB
lmbta06wt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsFEATURESLMBTA05WT1G We declare that the material of productLMBTA06WT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring S-LMBTA05WT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBTA06WT1GQualified and PPAP Capable.MAXIMUM RATINGSValue3Rating Symbol LMBTA05 LMBT
lmbta94lt1g.pdf
LESHAN RADIO COMPANY, LTD.LMBTA94LT1GLMBTA94LT1GS-LMBTA94LT1GPNP EPITAXIAL PLANAR TRANSISTORWe declare that the material of product3compliance with RoHS requirements.Description1The LMBTA94LT1G is designed for application 2that requires high voltage.SOT 23Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to LMBTA94LT1GCOLLECTOR
lmbta14lt1g.pdf
LESHAN RADIO COMPANY, LTD.Darlington Amplifier Transistors We declare that the material of productcompliance with RoHS requirements.ORDERING INFORMATIONLMBTA13LT1GDevice Marking ShippingLMBTA14LT1GLMBTA13LT1G1M 3000/Tape & ReelS-LMBTA13LT1GS-LMBTA13LT1GLMBTA14LT1G1N 3000/Tape & ReelS-LMBTA14LT1GLMBTA13LT3GS-LMBTA14LT1G1M 10000/Tape & ReelS-LMBTA13LT3GLMB
lmbta43lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorsWe declare that the material of product compliance with RoHS requirements.LMBTA42LT1GS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and LMBTA43LT1GPPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONS-LMBTA43LT1GDevice Marking P
lmbta13lt1g.pdf
LESHAN RADIO COMPANY, LTD.Darlington Amplifier Transistors We declare that the material of productcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBTA13LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.LMBTA14LT1GORDERING INFORMATIONS-LMBTA13LT1GDevice Marking ShippingS-LMBTA14LT1G(S
lmbta42lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage Transistors We declare that the material of productcompliance with RoHS requirements.LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1GSite and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping S-LMB
lmbta92lt1g lmbta92lt3g lmbta93lt1g lmbta93lt3g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050