Биполярный транзистор LMBT2516QLT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: LMBT2516QLT1G
Маркировка: 1GD
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT23
Аналоги (замена) для LMBT2516QLT1G
LMBT2516QLT1G Datasheet (PDF)
lmbt2516qlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLMBT2516QLT1GSeriesPNP Silicon3FEATURE High current capacity in compact package. Epitaxial planar type.1 NPN complement: LMBT2506QLT1G2 We declare that the material of product compliance with RoHS requirements.SOT23DEVICE MARKING AND ORDERING INFORMATIONCOLLECTORDevice Marking Shipping 3LMBT2516PLT1G1GB
lmbt2506qlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLMBT2506QLT1GSeriesNPN Silicon3FEATURE High current capacity in compact package. Epitaxial planar type.1 PNP complement: LMBT2516QLT1G2 We declare that the material of product compliance with RoHS requirements.SOT23DEVICE MARKING AND ORDERING INFORMATIONCOLLECTORDevice Marking Shipping3LMBT2506PLT1G1GA
lmbt2907lt1g lmbt2907alt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorPNP SiliconLMBT2907LT1GLMBT2907ALT1G We declare that the material of product compliance with RoHS requirements.S-LMBT2907LT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT2907ALT1G3ORDERING INFORMATION1Device Marki
lmbt2222alt1g lmbt2222alt3g.pdf
LMBT2222ALT1GS-LMBT2222ALT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDev
lmbt2222awt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconThese transistors are designed for generalpurpose amplifier applications. They are LMBT2222AWT1Ghoused in the SOT323/SC70 package whichS-LMBT2222AWT1Gis designed for low power surface mountapplications.We declare that the material of product 3compliance with RoHS requirements.S- Prefix for Automotive a
lmbt2222adw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
lmbt2907awt1g lmbt2907awt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorPNP SiliconFEATURELMBT2907AWT1GWe declare that the material of product compliance with RoHS requirements.S-LMBT2907AWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATION1Device Marking Shippingr2 LMBT2907A
lmbt2907alt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLMBT2907ALT1GFEATURESS-LMBT2907ALT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12DEVICE MARKING AND ORDERI
lmbt2222att1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive
lmbt2907lt1g lmbt2907lt3g lmbt2907alt1g lmbt2907alt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorPNP SiliconLMBT2907LT1GLMBT2907ALT1G We declare that the material of product compliance with RoHS requirements.S-LMBT2907LT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT2907ALT1G3ORDERING INFORMATION1Device Marki
lmbt2907adw1t1g.pdf
LESHAN RADIO COMPANY, LTD.LMBT2907DW1T1GDual General PurposeLMBT2907ADW1T1GS-LMBT2907DW1T1GTransistorS-LMBT2907ADW1T1GFeatruesWe declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 654and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.MAXIMUM RATINGSValue1
lmbt2222att1g lmbt2222att3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive
lmbt2222alt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLMBT2222ALT1GFEATURESS-LMBT2222ALT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12SOT-23DEVICE MARKING AN
lmbt2907awt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorPNP SiliconFEATURELMBT2907AWT1GWe declare that the material of product compliance with RoHS requirements.S-LMBT2907AWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATION1Device Marking Shippingr2 LMBT2907A
lmbt2222adw1t1g lmbt2222adw1t3g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050