LMBT5551DW1T1G. Аналоги и основные параметры
Наименование производителя: LMBT5551DW1T1G
Маркировка: G1
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 80
Корпус транзистора: SC88
Аналоги (замена) для LMBT5551DW1T1G
- подборⓘ биполярного транзистора по параметрам
LMBT5551DW1T1G даташит
lmbt5551dw1t1g.pdf
LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE We declare that the material of product compliance with RoHS requirements. S-LMBT5551DW1T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 6 DEVICE MARKING AND ORDERING INFORMATION 5 4 De
lmbt5551dw1t1g lmbt5551dw1t3g.pdf
LMBT5551DW1T1G S-LMBT5551DW1T1G DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 1. FEATURES We declare that the material of product compliance with SC88(SOT-363) RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 C2 B1 E1 qualified and PPAP capable. 2. DEVICE MARKING AND ORD
lmbt5550lt1g lmbt5551lt1g.pdf
LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3
lmbt5551lt1g.pdf
LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3
Другие транзисторы: LMBTA92LT1G, LMBTA94LT1G, LMBT2506QLT1G, LMBT2516QLT1G, LMBT5087LT1G, LMBT5401DW1T1G, LMBT5401LT1G, LMBT5541DW1T1G, MJE350, LMBT5551LT1G, LMBT6427LT1G, LMBT6428LT1G, LMBT6517LT1G, LMBT6520LT1G, LMBT918LT1G, LMBT2222ADW1T1G, LMBT2222ALT1G
History: SD1462 | 2SB1607
🌐 : EN ES РУ
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
ac176 transistor | mpsa20 | irfp264 | ksc2690 | bc546 datasheet | mpsa06 transistor | tta004b | 2sc1116






