Справочник транзисторов. LMBT5551DW1T1G

 

Биполярный транзистор LMBT5551DW1T1G Даташит. Аналоги


   Наименование производителя: LMBT5551DW1T1G
   Маркировка: G1
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SC88
     - подбор биполярного транзистора по параметрам

 

LMBT5551DW1T1G Datasheet (PDF)

 ..1. Size:135K  lrc
 lmbt5551dw1t1g.pdf pdf_icon

LMBT5551DW1T1G

LESHAN RADIO COMPANY, LTD.DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5551DW1T1GFEATURE We declare that the material of product compliance with RoHS requirements. S-LMBT5551DW1T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.6DEVICE MARKING AND ORDERING INFORMATION54De

 ..2. Size:990K  lrc
 lmbt5551dw1t1g lmbt5551dw1t3g.pdf pdf_icon

LMBT5551DW1T1G

LMBT5551DW1T1GS-LMBT5551DW1T1GDUAL NPN SMALL SIGNAL SURFACEMOUNT TRANSISTOR 1. FEATURESWe declare that the material of product compliance withSC88(SOT-363) RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101C2 B1 E1 qualified and PPAP capable.2. DEVICE MARKING AND ORD

 6.1. Size:166K  lrc
 lmbt5550lt1g lmbt5551lt1g.pdf pdf_icon

LMBT5551DW1T1G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

 6.2. Size:166K  lrc
 lmbt5551lt1g.pdf pdf_icon

LMBT5551DW1T1G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
Back to Top

 


 
.