LMBT5551LT1G - описание и поиск аналогов

 

LMBT5551LT1G. Аналоги и основные параметры

Наименование производителя: LMBT5551LT1G

Маркировка: G1

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.225 W

Макcимально допустимое напряжение коллектор-база (Ucb): 180 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.6 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT23

 Аналоги (замена) для LMBT5551LT1G

- подборⓘ биполярного транзистора по параметрам

 

LMBT5551LT1G даташит

 ..1. Size:166K  lrc
lmbt5550lt1g lmbt5551lt1g.pdfpdf_icon

LMBT5551LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3

 ..2. Size:166K  lrc
lmbt5551lt1g.pdfpdf_icon

LMBT5551LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3

 ..3. Size:166K  lrc
lmbt5550lt3g lmbt5551lt3g lmbt5550lt1g lmbt5551lt1g.pdfpdf_icon

LMBT5551LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1G Site and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1G PPAP Capable. S-LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION 3

 ..4. Size:395K  lrc
lmbt5551lt1g lmbt5551lt3g.pdfpdf_icon

LMBT5551LT1G

LMBT5551LT1G S-LMBT5551LT1G High Voltage Transistors 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. SOT23 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMB

Другие транзисторы: LMBTA94LT1G, LMBT2506QLT1G, LMBT2516QLT1G, LMBT5087LT1G, LMBT5401DW1T1G, LMBT5401LT1G, LMBT5541DW1T1G, LMBT5551DW1T1G, D882P, LMBT6427LT1G, LMBT6428LT1G, LMBT6517LT1G, LMBT6520LT1G, LMBT918LT1G, LMBT2222ADW1T1G, LMBT2222ALT1G, LMBT2222ATT1G

 

 

 

 

↑ Back to Top
.