Справочник транзисторов. LMBT5551LT1G

 

Биполярный транзистор LMBT5551LT1G Даташит. Аналоги


   Наименование производителя: LMBT5551LT1G
   Маркировка: G1
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT23
 

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LMBT5551LT1G Datasheet (PDF)

 ..1. Size:166K  lrc
 lmbt5550lt1g lmbt5551lt1g.pdf pdf_icon

LMBT5551LT1G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

 ..2. Size:166K  lrc
 lmbt5551lt1g.pdf pdf_icon

LMBT5551LT1G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

 ..3. Size:166K  lrc
 lmbt5550lt3g lmbt5551lt3g lmbt5550lt1g lmbt5551lt1g.pdf pdf_icon

LMBT5551LT1G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

 ..4. Size:395K  lrc
 lmbt5551lt1g lmbt5551lt3g.pdf pdf_icon

LMBT5551LT1G

LMBT5551LT1GS-LMBT5551LT1GHigh Voltage Transistors1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.SOT232. DEVICE MARKING AND ORDERING INFORMATIONDevice Marking ShippingLMB

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History: BC847BWT1 | 2SC5407

 

 
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