Биполярный транзистор LMBT2222AWT1G Даташит. Аналоги
Наименование производителя: LMBT2222AWT1G
Маркировка: P1
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 75 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT323 SC70
Аналог (замена) для LMBT2222AWT1G
LMBT2222AWT1G Datasheet (PDF)
lmbt2222awt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconThese transistors are designed for generalpurpose amplifier applications. They are LMBT2222AWT1Ghoused in the SOT323/SC70 package whichS-LMBT2222AWT1Gis designed for low power surface mountapplications.We declare that the material of product 3compliance with RoHS requirements.S- Prefix for Automotive a
lmbt2222alt1g lmbt2222alt3g.pdf

LMBT2222ALT1GS-LMBT2222ALT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDev
lmbt2222adw1t1g.pdf

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
lmbt2222att1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive
Другие транзисторы... LMBT6427LT1G , LMBT6428LT1G , LMBT6517LT1G , LMBT6520LT1G , LMBT918LT1G , LMBT2222ADW1T1G , LMBT2222ALT1G , LMBT2222ATT1G , TIP41C , LMBT2907ADW1T1G , LMBT2907ALT1G , LMBT2907AWT1G , LMBT3904DW1T1G , LMBT3904LT1G , LMBT3904N3T5G , LMBT3904TT1G , LMBT3904WT1G .
History: SE1730 | 2SD1825 | BCY22
History: SE1730 | 2SD1825 | BCY22



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