Биполярный транзистор LMBT2907AWT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: LMBT2907AWT1G
Маркировка: 20
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT323 SC70
Аналоги (замена) для LMBT2907AWT1G
LMBT2907AWT1G Datasheet (PDF)
lmbt2907awt1g lmbt2907awt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorPNP SiliconFEATURELMBT2907AWT1GWe declare that the material of product compliance with RoHS requirements.S-LMBT2907AWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATION1Device Marking Shippingr2 LMBT2907A
lmbt2907awt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorPNP SiliconFEATURELMBT2907AWT1GWe declare that the material of product compliance with RoHS requirements.S-LMBT2907AWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATION1Device Marking Shippingr2 LMBT2907A
lmbt2907lt1g lmbt2907alt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorPNP SiliconLMBT2907LT1GLMBT2907ALT1G We declare that the material of product compliance with RoHS requirements.S-LMBT2907LT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT2907ALT1G3ORDERING INFORMATION1Device Marki
lmbt2907alt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLMBT2907ALT1GFEATURESS-LMBT2907ALT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12DEVICE MARKING AND ORDERI
lmbt2907lt1g lmbt2907lt3g lmbt2907alt1g lmbt2907alt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorPNP SiliconLMBT2907LT1GLMBT2907ALT1G We declare that the material of product compliance with RoHS requirements.S-LMBT2907LT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT2907ALT1G3ORDERING INFORMATION1Device Marki
lmbt2907adw1t1g.pdf
LESHAN RADIO COMPANY, LTD.LMBT2907DW1T1GDual General PurposeLMBT2907ADW1T1GS-LMBT2907DW1T1GTransistorS-LMBT2907ADW1T1GFeatruesWe declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 654and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.MAXIMUM RATINGSValue1
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050