Биполярный транзистор LMBT4401WT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: LMBT4401WT1G
Маркировка: 2X
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 6.5 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOT323 SC70
Аналоги (замена) для LMBT4401WT1G
LMBT4401WT1G Datasheet (PDF)
lmbt4401wt1g lmbt4401wt3g.pdf
LMBT4401WT1GS-LMBT4401WT1GGeneral Purpose Transistors NPN SiliconSC70(SOT-323)1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring3 Collector unique site and control change requirements; AEC-Q101 qualified and PPAP capable.1 Base2. DEVICE MARKING AND ORDERING
lmbt4401wt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose Transistor We declare that the material of product compliance with RoHS requirements.LMBT4401WT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT4401WT1GORDERING INFORMATIONDevice Marking Shipping3LMBT4401WT1G2X 3000/Tape & Reel
lmbt4401dw1t1g.pdf
LESHAN RADIO COMPANY, LTD.DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT4401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LMBT4401DW1T1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION654Device Marking ShippingLMBT4401
lmbt4401lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLMBT4401LT1GS-LMBT4401LT1GFEATURES1) We declare that the material of product compliant with3 RoHS requirements and Halogen Free.2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1011 Qualified and PPAP Capable.2SOT-23DEVICE MARKING AND
lmbt4401lt1g lmbt4401lt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLMBT4401LT1GS-LMBT4401LT1GFEATURES1) We declare that the material of product compliant with3 RoHS requirements and Halogen Free.2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1011 Qualified and PPAP Capable.2SOT-23DEVICE MARKING AND
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050