LMBT4401WT1G. Аналоги и основные параметры
Наименование производителя: LMBT4401WT1G
Маркировка: 2X
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 6.5 pf
Статический коэффициент передачи тока (hFE): 80
Корпус транзистора: SOT323 SC70
Аналоги (замена) для LMBT4401WT1G
- подборⓘ биполярного транзистора по параметрам
LMBT4401WT1G даташит
lmbt4401wt1g lmbt4401wt3g.pdf
LMBT4401WT1G S-LMBT4401WT1G General Purpose Transistors NPN Silicon SC70(SOT-323) 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring 3 Collector unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 1 Base 2. DEVICE MARKING AND ORDERING
lmbt4401wt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistor We declare that the material of product compliance with RoHS requirements. LMBT4401WT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBT4401WT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401WT1G 2X 3000/Tape & Reel
lmbt4401dw1t1g.pdf
LESHAN RADIO COMPANY, LTD. DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT4401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LMBT4401DW1T1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 6 5 4 Device Marking Shipping LMBT4401
lmbt4401lt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LMBT4401LT1G S-LMBT4401LT1G FEATURES 1) We declare that the material of product compliant with 3 RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable. 2 SOT-23 DEVICE MARKING AND
Другие транзисторы: LMBT3904WT1G, LMBT3906DW1T1G, LMBT3906LT1G, LMBT3906TT1G, LMBT3906WT1G, LMBT3908LT1G, LMBT4401DW1T1G, LMBT4401LT1G, 2SA1943, LMBT4403DW1T1G, LMBT4403LT1G, LMBT4403WT1G, LMBT4413DW1T1G, LNST3904F3T5G, LNST3906F3T5G, S8050LT1, S8550LT1
History: LBC858BWT1G
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Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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