BC817S - описание и поиск аналогов

SEMICONDUCTOR BC817S TECHNICAL DATA General Purpose Transistors MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 V Collector Base Voltage V CBO 50 V 3 Emitter Base Voltage V EBO 5.0 V 2 Collector Current Continuous I C 500 mAdc 1 SOT 23 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board, (1) P D 3

BC817SU NPN Silicon AF Transistor For general AF applications 4 3 High collector current 5 2 6 1 High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BC817SU B6s 1=E 2=C 3=C 4=C 5=C 6=B SC74 Maximum Ratings Parameter Symbol Value Unit 45 V Collect

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC817 16LT1/D BC817-16LT1 General Purpose Transistors NPN Silicon BC817-25LT1 COLLECTOR 3 BC817-40LT1 2 BASE 1 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 45 V Collector Base Voltage VCBO 50 V CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Emitter Base Voltage VEBO

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BC817DPN NPN/PNP general purpose transistor Product data sheet 2002 Nov 22 Supersedes data of 2002 Aug 09 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC817DPN FEATURES QUICK REFERENCE DATA High current (500 mA) SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipation VCEO collector

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC817W NPN general purpose transistor 1999 Apr 15 Product specification Supersedes data of 1997 Mar 05 Philips Semiconductors Product specification NPN general purpose transistor BC817W FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BC817DS NPN general purpose double transistor Product data sheet 2002 Nov 22 Supersedes data of 2002 Aug 09 NXP Semiconductors Product data sheet NPN general purpose double transistor BC817DS FEATURES QUICK REFERENCE DATA High current (500 mA) SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipation VCEO colle

BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA BC817 SOT23 - BC807 BC817W SOT323 SC-70 BC807W BC337[1] SOT54 (TO-92) SC-43A BC327 [1] Also available in SOT54A and SOT54 va

BC817-25 BC817-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type Marking BC817-25 6B BC817-40 6C SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPES ARE BC807-25 AND BC817-40 RESPECTIVELY SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH

BC817/BC818 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages 3 Complement to BC807/BC808 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector Emitter Voltage BC817 50 V BC818 30 V VCEO Collector Em

November 2006 BC817/BC818 tm NPN Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages 3 Complement to BC807/ BC808 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BC817 50

BC817-25QA; BC817-40QA 45 V, 500 mA NPN general-purpose transistors Rev. 1 3 September 2013 Product data sheet 1. Product profile 1.1 General description 500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number Package PNP compleme

BC817RA 45 V, 500 mA NPN/NPN general-purpose double transistors 14 September 2018 Product data sheet 1. General description NPN/NPN general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement BC807RA NPN/PNP complement BC817RAPN 2. Features and benefits Reduces component count Reduces pick

BC817DPN NPN/PNP general purpose transistor 27 November 2019 Product data sheet 1. General description NPN/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package. 2. Features and benefits Reduces component count Reduces pick and place costs AEC-Q101 qualified 3. Applications General purpose switching and amplification 4. Quick reference data Tabl

BC817-25QA; BC817-40QA 45 V, 500 mA NPN general-purpose transistors Rev. 1 3 September 2013 Product data sheet 1. Product profile 1.1 General description 500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number Package PNP compleme

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BC817DS NPN general purpose double transistor Product data sheet 2002 Nov 22 Supersedes data of 2002 Aug 09 NXP Semiconductors Product data sheet NPN general purpose double transistor BC817DS FEATURES QUICK REFERENCE DATA High current (500 mA) SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipation VCEO colle

BC817-25QA; BC817-40QA 45 V, 500 mA NPN general-purpose transistors Rev. 1 3 September 2013 Product data sheet 1. Product profile 1.1 General description 500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number Package PNP compleme

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC817W series 45 V, 500 mA NPN general-purpose transistors Rev. 7 11 June 2018 Product data sheet 1 Product profile 1.1 General description NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEDEC JEITA BC817W SOT323 - SC-70 BC807W BC817-16W BC807-16W B

BC817 series 45 V, 500 mA NPN general-purpose transistors Rev. 7 18 June 2018 Product data sheet 1 Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEDEC JEITA BC817 SOT23 TO-236AB - BC807 BC817-16 BC807-16 BC817-25 BC807-25

BC817KH series 45 V, 500 mA NPN general-purpose transistors Rev. 1 15 December 2017 Product data sheet 1 Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEDEC BC817K-16H SOT23 TO-236AB - BC817K-25H - BC817K-40H -

BC817K series 45 V, 500 mA NPN general-purpose transistors Rev. 2 6 March 2018 Product data sheet 1 Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEDEC BC817K-16 SOT23 TO-236AB BC807K-16 BC817K-25 BC807K-25 BC81

BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS Sutable for AF-Driver stages and low power output stages Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Emitter Voltage BC817 VCES 50 V BC818 30 V Collector Emitter Voltage BC817 VCEO 45 V BC818 25 V Emitter-Base Voltage VEB

BC 817-16W NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807W, BC808W (PNP) Type Marking Ordering Code Pin Configuration Package BC 817-16W 6As Q62702-C2320 1 = B 2 = E 3 = C SOT-323 BC 817-25W 6Bs Q62702-C2278 1 = B 2 = E 3 = C SOT-323 BC 817-40W 6Cs Q6

BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Ideally Suited for Automated Insertion Case SOT-23 Epitaxial Planar Die Construction Case Material Molded Plastic, Green Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 For Switching, AF

BC817-16Q /-25Q /-40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case SOT23 stringent requirements of automotive applications. Case Material Molded Plastic, Green Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Featu

BC817-16W / -25W / -40W Lead-free Green NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications SOT-323 Complementary PNP Types Available (BC807-xxW) Dim Min Max Lead Free By Design/RoHS Compliant (Note 1) A A 0.25 0.40 "Green" Device (Note 2) C B 1.15 1

BC817-16Q /-40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data Case SOT23 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material Molded Plastic, Green Molding Compound; UL stringent requirements of Automotive Applications. Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Feature

BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT323 Epitaxial Planar Die Construction Case Material molded plastic, Green molding compound Complementary PNP Types BC807-xxW UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications Moi

BC817-16Q / -25Q / -40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data Case SOT23 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material Molded Plastic, Green Molding Compound; UL stringent requirements of Automotive Applications. Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020

SOT23 NPN SILICON PLANAR BC817 MEDIUM POWER TRANSISTORS BC818 ISSUE 4 june 1996 T I D T I 8 D 8 8 8 8 8 E C 8 8 8 8 8 8 B T T 8 8 8 8 8 8 SOT23 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 IT II V I V V II i V I V V i V I V V I I i II I I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT

BC817UPN NPN Silicon AF Transistor Array For AF stages and driver applications 4 3 High current gain 5 2 6 1 Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistors in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 B2 E2 6 5 4 Tape loading orientation TR2 Marking on SC74 package TR1

BC817K.../BC818K... NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BC817K-16 6As 1 = B 2 = E 3 = C - - - SOT23 BC817K-16W 6As 1 = B 2 = E 3 = C - - - SOT323 BC817K-25 6Bs

BC817K.../BC818K... NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BC817K-16 6As 1 = B 2 = E 3 = C - - - SOT23 BC817K-16W 6As 1 = B 2 = E 3 = C - - - SOT323 BC817K-25 6Bs

BC817U NPN Silicon AF Transistor Array For AF stages and driver applications 4 3 High current gain 5 2 6 1 Low collector-saturation voltage Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07178 Type Marking Pin Config

BC817DPN Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 NPN/PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Transistors Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Ran

BC817-16 MCC Micro Commercial Components TM THRU 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 BC817-40 Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Small Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Signal Transistor Epox

BC817-16 MCC Micro Commercial Components TM THRU 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 BC817-40 Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Signal Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity L

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Complian

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors www.onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Compliant

BC817-40W 45 V, 0.5 A, General Purpose NPN Transistor ON Semiconductor s BC817-40W is a General Purpose NPN Transistor that is housed in the SC-70/SOT-323 package. Features www.onsemi.com AEC-Q101 Qualified and Consult Factory for PPAP Capable This Device is Pb-Free, Halogen Free/BFR Free and is RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS (TA = 25 C) Rating Symbo

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Complian

BC817-16LT1G, BC817-25LT1G, BC817-40LT1G General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 45 V 3 Collector - Base Voltage VCBO 50 V Emitter - Base Voltage VEBO 5.0 V 1 2 Collect

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Complian

BC817-16LT1G, BC817-25LT1G, BC817-40LT1G General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 45 V 3 Collector - Base Voltage VCBO 50 V Emitter - Base Voltage VEBO 5.0 V 1 2 Collect

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Complian

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors www.onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Compliant

BC817-40W 45 V, 0.5 A, General Purpose NPN Transistor ON Semiconductor s BC817-40W is a General Purpose NPN Transistor that is housed in the SC-70/SOT-323 package. Features www.onsemi.com NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 This Device is Pb-Free, Halogen Fre

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Complian

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Complian

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Complian

BC817-16LT1G, BC817-25LT1G, BC817-40LT1G General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 45 V 3 Collector - Base Voltage VCBO 50 V Emitter - Base Voltage VEBO 5.0 V 1 2 Collect

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Complian

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http //onsemi.com NPN Silicon COLLECTOR Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; 1 BASE AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Complian

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UNISONIC TECHNOLOGIES CO., LTD BC817 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 BC817G-xx-AE3-R SOT-23 E B C Tape Reel BC817G-xx-AL3-R SOT-323 E B C T

BC817 NPN Silicon Transistor Descriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low power 2 output stages SOT-23 Complementary pair with BC807 Ordering Information Type NO. Marking Package Code NA BC817 SOT-23 Device Code hFE Rank Year&Wee

BC817F NPN Silicon Transistor Descriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low power output stages 2 SOT-23F Complementary pair with BC807F Ordering Information Type NO. Marking Package Code NA BC817F SOT-23F Device Code hFE Rank Year&Week Code

BC817 -16, -25, -40 500 mA, 50 V NPN Plastic Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES For general AF applications A Collector L 3 High collector current 3 3 High current gain Top View C B Low collector-emitter saturation voltage 1 1 1 2 Complementary ty

BC817 -16W, -25W, -40W 500 mA, 50 V NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES For general AF applications A L High collector current 3 3 High current gain Top View C B Low collector-emitter saturation voltage 1 1 2 2 K E PACKAGE INFORMATI

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N P N transistors Marking PACKAGE OUTLINE DETAILS BC817 = 6D ALL DIMENSIONS IN mm BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G Pin configuration 1 = BASE 2 =

TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) a

JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors BC817W TRANSISTOR (NPN) SOT-323 FEATURES For General AF Applications High Collector Current High Current Gain Low Collector-Emitter Saturation Voltage 1. BASE 2. EMITTER 3. COLLECTOR MAXMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Uni

SEMICONDUCTOR BC817 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to BC807. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 0.10 CHARACTERISTIC SYMBOL RATING UNIT L 0.5

SEMICONDUCTOR BC817W TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M Complementary to BC807W. DIM MILLIMETERS _ + A 2.00 0.20 D 2 _ B 1.25 + 0.15 _ + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 _ E 2.10 + 0.20 MAXIMUM RATING (Ta=25 ) G 0.65 H 0.15+0.1/-0.06 CHARACTERISTIC SYMBOL RATING UNIT J 1.30 K 0.00 0.10 V

SEMICONDUCTOR BC817A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to BC807A. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 0.10 CHARACTERISTIC SYMBOL RATING UNIT L 0

BC817 TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 SOT-23 FEATURES 1. BASE For general AF applications 2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V

BC8 1 7 TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 SOT-23 FEATURES 1. BASE For general AF applications 2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50

BC817-16 BC817-25 BC817-40 SOT-23 Transistor(NPN) 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V Dimen

BC817-16/-25/-40 NPN General Purpose Amplifier FEATURES 1. BASE For general AF application. A SOT-23 2. EMITTER Dim Min Max Complementary PNP type available 3. COLLECTOR A 2.70 3.10 E BC807. B 1.10 1.50 K B High collector current, high current gain. C 1.0 Typical D 0.4 Typical Low collector-emitter saturation voltage. E 0.35 0.48 J D G 1.80 2.00 ORDERING

BC817-16/BC817-25 BC817-40 COLLECTOR 3 General Purpose Transistor 3 NPN Silicon 1 1 BASE 2 SOT-23 2 EMITTER ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Unit Value V CEO 45 Collector-Emitter Voltage Vdc VCBO Vdc Collector-Base Voltage 50 VEBO Vdc 5.0 Emitter-Base Voltage mAdc Collector Current-Continuous IC 500 Thermal Characteristics Chara

FM120-M WILLAS THRU BC817-40WT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize

WILLAS BC817-xxLT1 General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS SOT 23 Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 V Collector Base Voltage V CBO 50 V Emitter Base Voltage V E

Spec. No. C906N3 Issued Date 2003.05.12 CYStech Electronics Corp. Revised Date Page No. 1/4 General Purpose NPN Epitaxial Planar Transistor BC817N3 Description The BC817N3 is designed for general purpose switching and amplification applications. Complementary to BC807N3. Features High current (max. 500mA) Low voltage (max 45V). Symbol Outline BC81

BC817 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features I BC807 C High IC ,complementary pair with BC807. / Applications Purpose General power amplifier and switching application.

BC817-25 BC817-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type Marking BC817-25 6B BC817-40 6C SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPES ARE BC807-25 AND BC817-40 RESPECTIVELY SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH

BC817 / BC818 NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups -16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collec

LESHAN RADIO COMPANY, LTD. LBC817-16DMT1G LBC817-25DMT1G Dual General Purpose Transistors LBC817-40DMT1G NPN Duals S-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40DM

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC817-16DPMT1G LBC817-25DPMT1G NPN/PNP Duals LBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-25DPMT1G S-LBC

LESHAN RADIO COMPANY, LTD. LBC817-16DMT1G LBC817-25DMT1G Dual General Purpose Transistors LBC817-40DMT1G NPN Duals S-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40DMT

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC817-16DPMT1G LBC817-25DPMT1G NPN/PNP Duals LBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-25DPMT1G S-LBC

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC817-16DPMT1G LBC817-25DPMT1G NPN/PNP Duals LBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-25DPMT1G S-LBC

LESHAN RADIO COMPANY, LTD. General Purpose Transistors We declare that the material of product compliance with RoHS requirements. LBC817-25WT1G 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage V CEO 45 V Collector Base Voltage V CBO 50 V SC-70 Emitter Base Voltage V EBO 5.0 V Collector Current Continuous I C 500 mAdc THERMAL CHARACTERISTICS

LBC817-40WT1G S-LBC817-40WT1G NPN Silicon General Purpose Transistors 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. LBC817-40WT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40WT1G 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector Emit

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC817-16DPMT1G LBC817-25DPMT1G NPN/PNP Duals LBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-25DPMT1G S-LBC

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC817-16LT1G LBC817-25LT1G We declare that the material of product compliance with RoHS requirements. LBC817-40LT1G 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector Emitter Voltage V CEO 45 V 2 Collector Base Voltage V CBO 50 V SOT 23 Emitter Base Voltage V EBO 5.0 V Collector Current Contin

LESHAN RADIO COMPANY, LTD. LBC817-16LT1G LBC817-25LT1G General Purpose Transistors LBC817-40LT1G NPN Silicon S-LBC817-16LT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-25LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40LT1G 3 MA

LESHAN RADIO COMPANY, LTD. LBC817-16DMT1G LBC817-25DMT1G Dual General Purpose Transistors LBC817-40DMT1G NPN Duals S-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC817-25DMT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40DMT

LESHAN RADIO COMPANY, LTD. LBC817-16LT1G LBC817-25LT1G General Purpose Transistors LBC817-40LT1G NPN Silicon S-LBC817-16LT1G S-LBC817-25LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and S-LBC817-40LT1G Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 MA

LESHAN RADIO COMPANY, LTD. LBC817-16DPMT1G LBC817-25DPMT1G Dual General Purpose Transistors LBC817-40DPMT1G NPN/PNP Duals S-LBC817-16DPMT1G We declare that the material of product compliance with RoHS requirements. S-LBC817-25DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC

LESHAN RADIO COMPANY, LTD. LBC817-16LT1G General Purpose Transistors LBC817-25LT1G LBC817-40LT1G NPN Silicon S-LBC817-16LT1G S-LBC817-25LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC817-40LT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 MAX

LESHAN RADIO COMPANY, LTD. General Purpose Transistors We declare that the material of product compliance with RoHS requirements. LBC817-16WT1G S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC817-16WT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage V

BC817 SERIES General Purpose Transistors BC817-16/25/40LG BC817-16LG, BC817-25LG,BC817-40LG SERIES Features 3 Pb-Free Packages are Available 1 2 Maximum Ratings Rating Symbol Value Unit SOT-23 Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V COLLECTOR Emitter-Base Voltage VEBO 5.0 V 3 Collector Current - Continuous IC 500 mAdc 1 BASE 2 EMITTER Devi

BC817 SERIES General Purpose Transistors BC817-16/25/40LG BC817-16LG, BC817-25LG,BC817-40LG SERIES Features 3 Pb-Free Packages are Available 1 2 Maximum Ratings Rating Symbol Value Unit SOT-23 Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V COLLECTOR Emitter-Base Voltage VEBO 5.0 V 3 Collector Current - Continuous IC 500 mAdc 1 BASE 2 EMITTER Devi

SMD Type Transistors NPN Transistors BC817 (KC817) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features For general AF applications Low collector-emitter saturation voltage 1 2 Complementary types BC807 (PNP) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

SMD Type Transistors NPN Transistors BC817W (KC817W) Features For General AF Applications High Collector Current High Current Gain Low Collector-Emitter Saturation Voltage Complementary to BC807W 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt

SMD Type Transistors NPN Transistors BC817A (KC817A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features For general AF applications. High collector current. 1 2 High current gain. +0.1 +0.05 0.95 -0.1 0.1 -0.01 Low collector-emitter saturation voltage. +0.1 1.9 -0.1 Complementary PNP type available(BC807A) 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta

BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 45 Volt POWER 330 mW FEATURES General purpose amplifier applications 0.120(3.04) NPN epitaxial silicon, planar design 0.110(2.80) Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) 0.056(1.40) 0.047(1.20) MECHANICA

PBC817-16-AU / BC817-25-AU / BC817-40-AU Silicon NPN General Purpose Transistors SOT-23 Unit inch(mm) 45V 500mA Voltage Current Features Silicon NPN Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 Stan

General Purpose Transistors BC817-16-G/25-G/40-G (NPN) RoHS Device Features -For general AF applications. SOT-23 -High collector current. 0.119(3.00) -High current gain. 0.110(2.80) -Low collector-emitter saturation voltage. 3 0.056(1.40) Marking 0.047(1.20) BC817-16-G 6A 1 2 0.006(0.15) BC817-25-G 6B 0.083(2.10) 0.002(0.05) 0.066(1.70) BC817-40-G 6C 0.044(1.10)

General Purpose Transistors BC817-16-G/25-G/40-G (NPN) RoHS Device Features -For general AF applications. SOT-23 -High collector current. 0.119(3.00) -High current gain. 0.110(2.80) -Low collector-emitter saturation voltage. 3 0.056(1.40) Marking 0.047(1.20) BC817-16-G 6A 1 2 0.006(0.15) BC817-25-G 6B 0.083(2.10) 0.002(0.05) 0.066(1.70) BC817-40-G 6C 0.044(1.10)

KBC817 16/25/40C N P N S i l i c o n T r a n s i s t o r 2018.03.02 2018.03.02 2018.03.02 2018.03.02 1 000 2018.03.02 AUK Dalian 1 KBC817 16/25/40C NPN Silicon Transistor Descriptions

BC817 NPN Silicon Epitaxial Planar Transistors For general AF applications 1. BASE High collector current 2. EMITTER High current gain 3. COLLECTOR Low collector-emitter saturation voltage Complementary types BC807 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50

R UMW UMW BC817 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) a

RoHS BC817- 16/ - 25/ 40 BC817- 16/ - 25/ 40 NPN EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGANL TRANSISTORS o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Emitter Voltage VCEO 45 V V Emitter-Base Voltage VCBO 50 mA Collector Current Ic 1000 Peak Colteetor Current IcM mA 1000 Peak Fmitter Current IEM mA 800 o PD Power Dissipation

BC817-16/-25/-40 NPN Transistor Features SOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the PNP transistors BC817 are recommended 1 Base 2. Emitter 3. Collector Absolute Maximum Ratings (TA=25 , unless otherwisenoted) Parameter Symbol Valu

BC817-40 BC817-16 BC817-25 SOT-23 NPN Plastic-Encapsulate Transistors FEATURES For general AF applications High collector current T-23 SO High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-B

HD ST0.3 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V C V Collector-Emitter Voltage 45 V CEO V Emitter

BC817 SOT-23 Plastic-Encapsulate Transistor SOT-23 BC817- 16 TRANSISTOR (NPN) BC817- 25 BC817- 40 FEATURES 1. BASE For general AF applications 2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) PACKAGE SPECIFICATIONS Box Size QTY/Box Reel DIA. Q'TY/Reel Carton S

www.msksemi.com BC817-16/25/40 Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) hFE

Jingdao Microelectronics co.LTD BC817 BC817 SOT-23 NPN TRANSISTOR 3 FEATURES For general AF applications High collector current High current gain 1 Low collector-emitter saturation voltage Complementary types BC807 (PNP) 2 1.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.EMITTER 3.COLLECTOR Sy

BC817 TRANSISTOR (NPN) REV.08 1 of 3 BC817 REV.08 2 of 3 BC817 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Plastic surface mounted package; 3 leads SOT-23 REV.08 3 of 3

BC817 Series TRANSISTOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 50 V Co

BC817 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features BC807 ; Complementary to BC807 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

BC817 BC817 BC817 BC817 BC8 17 TRANSISTOR(NPN) FEATURE For general AF applications SOT-23 High collector current High current gain 1 BASE Low collector-emitter saturation voltage 2 EMITTER Complementary types BC807 (PNP) 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

RoHS COMPLIANT BC817-16 THRU BC817-40 NPN General Purpose Amplifier Features Capable of 0.3Watts(TA=25 ) of Power Dissipation Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking BC817-16 6A BC817-25 6B BC817-40 6C Maximum Rating Item Symbol Unit Va

RoHS COMPLIANT BC817-16W THRU BC817-40W NPN General Purpose Amplifier Features Capable of 0.2Watts(TA=25 ) of Power Dissipation Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking BC817-16W 6A BC817-25W 6B BC817-40W 6C Maximum Ratings (Ta=25 Unless

RoHS RoHS COMPLIANT COMPLIANT BC817-16Q THRU BC817-40Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Mechanical Data SOT-23 Case Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking

BC817 TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types BC807 (PNP) a Collector-Base Voltage 50 V Collec

BC817 BC817 SOT-23 Plastic-Encapsulate Transistors (NPN) General description SOT-23 Plastic-Encapsulate Transistors (NPN) FEATURES Complementary to BC807 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any DEVICE MARKING CODE Maximum Ratings & Thermal Charact

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD BC817 FEATURES NPN Low Frequency AmplifierTransistor MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage V 45 V CEO Collector-Base Voltage V 50 V CBO - Emitter-

BC817 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to BC807 High Collector Current Low Collector-emitter saturation voltage High current gain Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless o

Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications A Complementary Types Available (BC ) SOT-23 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H Maximum