Order this documentMOTOROLAby 2N6497/DSEMICONDUCTOR TECHNICAL DATA2N64972N6498*High Voltage NPN Silicon Power*Motorola Preferred DeviceTransistors5 AMPERE. . . designed for high voltage inverters, switching regulators and lineoperatedPOWER TRANSISTORSamplifier applications. Especially well suited for switching power supply applications.NPN SILICON High Collecto

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6497/6498/6499 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 DC Current Gain- : hFE= 10-75@IC= 2.5A APPLICATIONS Designed for high voltage inverters, switching regulators and line operated amplifier applica

Order this documentMOTOROLAby 2N6487/DSEMICONDUCTOR TECHNICAL DATANPN2N6487Complementary Silicon PlasticPower Transistors*2N6488PNP. . . designed for use in generalpurpose amplifier and switching applications. DC Current Gain Specified to 15 Amperes 2N6490hFE = 20150 @ IC = 5.0 AdchFE = 5.0 (Min) @ IC = 15 Adc2N6491* CollectorEmitter Sustaining

2N64872N6488/2N6490COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The 2N6487 and 2N6488 are siliconepitaxial-base NPN transistors in Jedec TO-220plastic package.They are inteded for use in power linear and low32frequency switching applications.1The 2N6487 complementary type is 2N6490.

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2N6497High Voltage NPN SiliconPower TransistorsThese devices are designed for high voltage inverters, switchingregulators and line-operated amplifier applications. Especially wellsuited for switching power supply applications.http://onsemi.comFeatures5 AMPERE High Collector-Emitter Sustaining Voltage -VCEO(sus) = 250 Vdc (Min)POWER TRANSISTORS Excellent DC Current

2N6487, 2N6488 (NPN),2N6490, 2N6491 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andwww.onsemi.comswitching applications.Features15 AMPERE High DC Current GainCOMPLEMENTARY SILICON High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact Package60-80 VOLTS, 75 WATTS These

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ABoca Semiconductor Corp http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.com

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N6486, 2N6487, 2N64882N6489, 2N6490, 2N64912N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORSGeneral Purpose Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123

JMnic Product Specification Silicon NPN Power Transistors 2N6492 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain DARLINGTON APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximu

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6491 DESCRIPTION With TO-220 package Complement to type 2N6488 APPLICATIONS It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute m

JMnic Product Specification Silicon PNP Power Transistors 2N6489 2N6490 2N6491 DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outli

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6490 DESCRIPTION With TO-220 package Complement to type 2N6487 APPLICATIONS It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute m

isc Silicon NPN Darlington Power Transistor 2N6492DESCRIPTIONHigh DC current gain: h = 500(Min)@ I = 3AFE CWith TO-3 packageLow collector saturation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier andlow frequency swithing applications.ABSOLUTE MAXI

isc Silicon NPN Power Transistor 2N6495DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEOWith TO-66 packageLow collector saturation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and wide-band amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon NPN Darlington Power Transistor 2N6493DESCRIPTIONHigh DC current gain: h = 500(Min)@ I = 3AFE CWith TO-3 packageLow collector saturation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier andlow frequency swithing applications.ABSOLUTE MAXI

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6489 2N6490 2N6491 DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1

isc Silicon NPN Darlington Power Transistor 2N6494DESCRIPTIONHigh DC current gain: h = 500(Min)@ I = 3AFE CWith TO-3 packageLow collector saturation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier andlow frequency swithing applications.ABSOLUTE MAXI