Биполярный транзистор 2N6517
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N6517
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.625
W
Макcимально допустимое напряжение коллектор-база (Ucb): 350
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 350
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 40
MHz
Ёмкость коллекторного перехода (Cc): 6
pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора:
TO92
Аналоги (замена) для 2N6517
2N6517
Datasheet (PDF)
..1. Size:329K motorola
2n6515 2n6516 2n6517 2n6519 2n6520.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6515/DHigh Voltage TransistorsNPN2N6515*COLLECTOR COLLECTOR thru 2N65173 3PNP2 22N6519BASE BASENPN PNP2N6520*1 1Voltage and current are negativeEMITTER EMITTER for PNP transistorsMAXIMUM RATINGS*Motorola Preferred Device2N6516 2N65172N6519 2N6520Rating Symbol 2N6515 UnitCollectorEm
..2. Size:229K motorola
2n6515 2n6517 2n6519 2n6520.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6515/DHigh Voltage TransistorsNPNCOLLECTOR COLLECTOR2N65153 32N65172 2PNPBASE BASENPN PNP2N65191 1EMITTER EMITTER2N6520MAXIMUM RATINGSVoltage and current are negative2N6517 for PNP transistors2N6520Rating Symbol 2N6515 2N6519 UnitCollectorEmitter Voltage VCEO 250 300 350 VdcCollector
..3. Size:175K fairchild semi
2n6517.pdf 
August 20102N6517NPN Epitaxial Silicon TransistorFeatures High Voltage Transistor Collector Dissipation: PC(max) = 625mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Vo
..4. Size:21K samsung
2n6517.pdf 
2N6517 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO=350V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 350 VCollector-Emitter Voltage VCEO 350 VEmitter-Base Voltage VEBO 6 VCollector Current IC 500 mACollector Dissipation PC 625 mW
..5. Size:116K onsemi
2n6515 2n6517 2n6520.pdf 
NPN - 2N6515, 2N6517;PNP - 2N6520High Voltage TransistorsNPN and PNPFeatureshttp://onsemi.com Voltage and Current are Negative for PNP TransistorsCOLLECTOR These are Pb-Free Devices*32BASEMAXIMUM RATINGSCOLLECTORNPNRating Symbol Value Unit31Collector - Emitter Voltage VCEO VdcEMITTER2N6515 25022N6517, 2N6520 350BASECollector - Base Voltage V
..6. Size:240K onsemi
2n6517.pdf 
NPN Epitaxial SiliconTransistor2N6517Features High Voltage Transistorwww.onsemi.com Collector Dissipation: PC(max) = 625 mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted.)Symbol Parameter Value UnitVCBO Collector-Base Voltage V1122
..7. Size:130K secos
2n6517.pdf 
2N6517 0.5 A, 350V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Voltage Transistors G H Complement of the 2N6520 EmitterBase JCollectorA DMillimeterBREF. CollectorMin. Max. A 4.40 4.70KB 4.30 4.70 C 12.70 -D 3.30 3.8
..8. Size:365K jiangsu
2n6517.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 2N6517 TRANSISTOR (NPN) 1. EMITTERFEATURES 2. BASE Complement to 2N65203. COLLECTOR Equivalent Circuit
..9. Size:160K first silicon
2n6517.pdf 
SEMICONDUCTOR2N6517 TECHNICAL DATAB C2N6517 TRANSISTOR (NPN) DIM MILLIMETERSA 4.70 MAXEFEATURES G B 4.80 MAXC 3.70 MAXD Complement To 2N6520 D 0.55 MAXE 1.00F 1.27G 0.85H 0.45_HJ 14.00 0.50L 2.30F FM 0.51 MAX1 2 31. EMITTER2. BASE3. COLLECTORTO-92MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collecto
0.1. Size:240K onsemi
2n6517bu 2n6517ta 2n6517cta.pdf 
NPN Epitaxial SiliconTransistor2N6517Features High Voltage Transistorwww.onsemi.com Collector Dissipation: PC(max) = 625 mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted.)Symbol Parameter Value UnitVCBO Collector-Base Voltage V1122
0.2. Size:264K foshan
2n6517m 3cg6517m.pdf 
2N6517M(3CG6517M) NPN /SILICON NPN TRANSISTOR :/Purpose: High voltage application. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW CT 150 j T -55150 stg /Electrical characteristics(T
9.1. Size:26K fairchild semi
2n6518.pdf 
2N6518High Voltage Transistor Collector-Emitter Voltage: VCEO= -250V Collector Dissipation: PC (max)=625mW Complement to 2N6515TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -250 VVCEO Collector-Emitter Voltage -250 VVEBO Emitt
9.2. Size:26K fairchild semi
2n6519.pdf 
2N6519High Voltage Transistor Collector-Emitter Voltage: VCEO= -300V Collector Dissipation: PC (max)=625mWTO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -300 VVCEO Collector-Emitter Voltage -300 VVEBO Emitter-Base Voltage -5 VIC C
9.4. Size:43K samsung
2n6515.pdf 
2N6515 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 250V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 250 VCollector-Emitter Voltage VCEO 250 VEmitter-Base Voltage VEBO 6 VCollector Current IC 500 mACollector Dissipation PC 625 mW
9.5. Size:11K semelab
2n6511.pdf 
2N6511Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 250V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
9.6. Size:11K semelab
2n6512.pdf 
2N6512Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
9.7. Size:214K cdil
2n6515-7 9 2n6520.pdf 
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N65192N6516, 2N65202N6517TO-92Plastic PackageHIGH VOLTAGE TRANSISTORSABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N6515 2N6516 2N6517 UNIT2N6519 2N6520VCEOCollector Emitter Voltage 250 300 350 VV
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