2N6519 - Даташиты. Аналоги. Основные параметры

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN 2N6515 * COLLECTOR COLLECTOR thru 2N6517 3 3 PNP 2 2 2N6519 BASE BASE NPN PNP 2N6520 * 1 1 Voltage and current are negative EMITTER EMITTER for PNP transistors MAXIMUM RATINGS *Motorola Preferred Device 2N6516 2N6517 2N6519 2N6520 Rating Symbol 2N6515 Unit Collector Em

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN COLLECTOR COLLECTOR 2N6515 3 3 2N6517 2 2 PNP BASE BASE NPN PNP 2N6519 1 1 EMITTER EMITTER 2N6520 MAXIMUM RATINGS Voltage and current are negative 2N6517 for PNP transistors 2N6520 Rating Symbol 2N6515 2N6519 Unit Collector Emitter Voltage VCEO 250 300 350 Vdc Collector

2N6519 High Voltage Transistor Collector-Emitter Voltage VCEO= -300V Collector Dissipation PC (max)=625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC C

2N6518 High Voltage Transistor Collector-Emitter Voltage VCEO= -250V Collector Dissipation PC (max)=625mW Complement to 2N6515 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitt

August 2010 2N6517 NPN Epitaxial Silicon Transistor Features High Voltage Transistor Collector Dissipation PC(max) = 625mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Vo

2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 Collector-Emitter Voltage VCEO= 250V Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 250 V Collector-Emitter Voltage VCEO 250 V Emitter-Base Voltage VEBO 6 V Collector Current IC 500 mA Collector Dissipation PC 625 mW

2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 Collector-Emitter Voltage VCEO=350V Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 350 V Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 6 V Collector Current IC 500 mA Collector Dissipation PC 625 mW

NPN - 2N6515, 2N6517; PNP - 2N6520 High Voltage Transistors NPN and PNP Features http //onsemi.com Voltage and Current are Negative for PNP Transistors COLLECTOR These are Pb-Free Devices* 3 2 BASE MAXIMUM RATINGS COLLECTOR NPN Rating Symbol Value Unit 3 1 Collector - Emitter Voltage VCEO Vdc EMITTER 2N6515 250 2 2N6517, 2N6520 350 BASE Collector - Base Voltage V

NPN Epitaxial Silicon Transistor 2N6517 Features High Voltage Transistor www.onsemi.com Collector Dissipation PC(max) = 625 mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25 C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector-Base Voltage V 1 1 2 2

NPN Epitaxial Silicon Transistor 2N6517 Features High Voltage Transistor www.onsemi.com Collector Dissipation PC(max) = 625 mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25 C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector-Base Voltage V 1 1 2 2

2N6511 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 250V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

2N6512 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

2N6517 0.5 A, 350V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Voltage Transistors G H Complement of the 2N6520 Emitter Base J Collector A D Millimeter B REF. Collector Min. Max. A 4.40 4.70 K B 4.30 4.70 C 12.70 - D 3.30 3.8

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2N6515 2N6516 2N6517 UNIT 2N6519 2N6520 VCEO Collector Emitter Voltage 250 300 350 V V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N6517 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. BASE Complement to 2N6520 3. COLLECTOR Equivalent Circuit

SEMICONDUCTOR 2N6517 TECHNICAL DATA B C 2N6517 TRANSISTOR (NPN) DIM MILLIMETERS A 4.70 MAX E FEATURES G B 4.80 MAX C 3.70 MAX D Complement To 2N6520 D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 0.50 L 2.30 F F M 0.51 MAX 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR TO-92 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collecto

2N6517M(3CG6517M) NPN /SILICON NPN TRANSISTOR /Purpose High voltage application. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW C T 150 j T -55 150 stg /Electrical characteristics(T