2SC4984 - описание и поиск аналогов

Ordering number ENN4633A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1882/2SC4984 Low-Frequency General-Purpose Amplifier Applications Applcations Package Dimensions Low-frequency power amplifier applications. unit mm Medium-speed switching. 2038A Small-sized motor drivers. [2SA1882/2SC4984] 4.5 1.5 1.6 Features Large current capacity. Low collector-to-e

SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors Product specification 2SC4984 Features Large current capacity. Low collector-to-emitter saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 15 V Emitter

SMD Type Transistors NPN Transistors 2SC4984 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=15V Complementary to 2SA1882 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 1

Ordering number EN4723 NPN Epitaxial Planar Silicon Transistor 2SC4987 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2106A High gain-bandwidth product. [2SC4987] Small collector capacitance. 0.75 0.3 0.6 Very small-sized package permitting 2SC4987- applied sets to be made small and

Ordering number 4661 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1881/2SC4983 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions AF power amplifier, medium-speed switching, small- unit mm sized motor drivers and LED drivers. 2018B [2SA1881/2SC4983] Features Large current capacity. Low collector-to-emitter saturation voltage. Very sm

Power Transistors 2SC4985 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 7.5 0.2 4.5 0.2 Features 90 High collector to base voltage VCBO 0.65 0.1 0.85 0.1 High collector to emitter VCEO Allowing automatic insertion with radial taping 1.0 0.1 0.8C 0.8C 0.7 0.1 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter

2SC4988 Silicon NPN Epitaxial ADE-208-004 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 8.5 GHz Typ High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4988 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratin

JMnic Product Specification Silicon NPN Power Transistors 2SC4980 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em

JMnic Product Specification Silicon NPN Power Transistors 2SC4982 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em

JMnic Product Specification Silicon NPN Power Transistors 2SC4981 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em

SMD Type Transistors NPN Transistors 2SC4983 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complement to 2SA1881 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Ba

SMD Type Transistors NPN Transistors 2SC4988 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.1A Collector Emitter Voltage VCEO=9V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 9 V Emitter - Base Voltage VEBO

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC4980 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Collector Current-I = 5A(Max.) C Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in drivers such as DC/DC convert

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4988 DESCRIPTION High Gain Bandwidth Product f = 8.5 GHz TYP. T High Gain, Low Noise Figure PG = 10.5 dB TYP. , NF = 1.3 dB TYP. @ f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF UHF wide band amplifier. ABSOLU

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC4982 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Collector Current-I = 10A(Max.) C Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in drivers such as DC/DC conver

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC4981 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in drivers such as DC/DC converters and actuators. ABSOLUTE MAXIMUM