Биполярный транзистор 13005DL - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 13005DL
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 32 W
Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 4.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 5 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: SOT82 TO126
13005DL Datasheet (PDF)
13005dl.pdf
R13005DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222
13005dl 2.pdf
R13005DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222
h13005dl.pdf
RH13005DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222
stt13005d.pdf
STT13005DHigh voltage fast-switching NPN power transistorFeatures Integrated antiparallel collector-emitter diode High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speedApplications12 Electronic ballast for fluorescent lighting 3SOT-32 Flyback and forward single transistor low power convertersFigure 1. Inte
apt13005di-dtf-dt.pdf
A Product Line ofDiodes IncorporatedGreenAPT13005D450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 450V Case: TO220F-3, TO251, TO220AB Type C BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound BVEBO > 9V UL Flammability Classification Rating 94V-0 IC = 4A High Collector Current Terminals: Finish - Matte Tin F
mje13005d.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 11TRANSISTOR TO-220TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1power transistor. It is characterized by high breakdown voltage,1high current capability, high switching speed and high reliability. TO-251 TO-126The UTC
mje13005d-k.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in
cdl13005d.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTOR CDL13005DTO-220Plastic Packagewith Built in DiodeABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 700 VCollector Emitter Voltage VCEO 400 VVEBOEmitter Base Voltage 9 VCollector Current Continuous IC 4 APower Dissipation
mje13005d.pdf
SEMICONDUCTOR MJE13005DTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.ABuilt-in Free wheeling Diode makes efficient anti saturation operation.OCSuitable for half bridge light ballast Applications.FDIM MILLIMETERSLow base drive requirement.E _G A 9.9 + 0.2MAXIMUM RATING (Ta=25 )B 15.95 MAXBC 1.3+0.1/-0.05Q_CHAR
mje13005df.pdf
SEMICONDUCTOR MJE13005DFTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.ACBuilt-in Free wheeling Diode makes efficient anti saturation operation.DIM MILLIMETERSSSuitable for half bridge light ballast Applications._A 10.0 + 0.3_+B 15.0 0.3ELow base drive requirement.C _2.70 0.3+D 0.76+0.09/-0.05MAXIMUM R
mje13005dc.pdf
SEMICONDUCTOR MJE13005DCTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.Built-in Free wheeling Diode makes efficient anti saturation operation.Suitable for half bridge light ballast Applications.Low base drive requirement.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 700 VVCEOCollec
mje13005d.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13005DNPN D / D SERIES TRANSISTORS MJE13005DNPN D
bld13005dx.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS BLD13005DXNPN D / D SERIES TRANSISTORS BLD13005DXNPN D
3dd13005d.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13005D MAIN CHARACTERISTICS Package I 4A CV 400V CEOP (TO-126/IPAK/IPAK-S3) 40W CP (TO-220/TO-220-S1) 75W C APPLICATIONS Energy-saving light Electronic ballasts High frequency swit
h13005d 2.pdf
RH13005D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222
13005d.pdf
R13005D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222F
h13005d.pdf
RH13005D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222
wbr13005d1.pdf
WBR13005D1WBR13005D1WBR13005D1WBR13005D1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in freewheeling diodeGeneral De
wbp13005d.pdf
WBP13005DWBP13005DWBP13005DWBP13005DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in free wheeling diodeGeneral DescriptionThis Device is designed for high Voltage, High speedswitching Characteristics required such as lightingsystem ,switching mode power supply.Absol
wbp13005d1.pdf
WBP13005D1WBP13005D1WBP13005D1WBP13005D1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in freewheeling diodeGeneral De
sbp13005d.pdf
SBP13005DSBP13005DSBP13005DSBP13005DHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed Minimum Lot-to-Lot h VariationFE Wide Reverse Bias SOA Built-in fr
sbp13005d1.pdf
SBP13005D1SBP13005D1SBP13005D1SBP13005D1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed Minimum Lot-to-Lot h VariationFE Wide Reverse Bias SOA Built-i
13005d.pdf
13005D400V,4A,C (2)AvailableRoHS*B (1) 1 COMPLIANT1.Base 2.Collector 3.Emitter E (3)(TC=25C) 700 VVCBO - 400 VVCEO - 9 VVEBO - 4 AIC
mje13005drb.pdf
MJE13005DRB NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C P (Ta=25)
mje13005dq3.pdf
MJE13005DQ3(3DD13005DQ3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 450 V CEO V 9.0 V EBO I 4 A C P
mje13005dt7.pdf
MJE13005DT7(3DD13005DT7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A
mje13005dt3.pdf
MJE13005DT3 (3DD13005DT3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C I 2 AB
mje13005dq7.pdf
MJE13005DQ7(3DD13005DQ7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P
mje13005dq5.pdf
MJE13005DQ5(3DD13005DQ5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P
mje13005dp5.pdf
MJE13005DP5(3DD13005DP5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 2.5 A C
mje13005dq4.pdf
MJE13005DQ4(3DD13005DQ4) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C P (T
e13005d-213.pdf
E13005D-213PbE13005D-213Pb Free Plating ProductMJE Power Transistor with Damping DiodeProduct specificationSilicon NPN Power Transistor MJE13005 seriesDESCRIPTIONSilicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. _____________________Absolute Maximum Ratings ( Ta = 25 )Active anti-saturation netwo
mje13005d.pdf
Isc Silicon NPN Power Transistor MJE13005DDESCRIPTIONHigh Voltage CapabilityHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFluorescent lampElectronic ballastElectronic transformerSwitch mode power supplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
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