Биполярный транзистор H13005ADL
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: H13005ADL
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 55
W
Макcимально допустимое напряжение коллектор-база (Ucb): 400
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9
V
Макcимальный постоянный ток коллектора (Ic): 8
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 4
MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора:
SOT82
Аналоги (замена) для H13005ADL
H13005ADL
Datasheet (PDF)
..1. Size:120K jdsemi
h13005adl.pdf RH13005ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222
7.1. Size:227K semihow
ksh13005a.pdf KSH13005AKSH13005A SEMIHOW REV.A1,Oct 2007KSH130005AKSH13005ASwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls4 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted75 WattsTO-220
7.2. Size:223K semihow
ksh13005af.pdf KSH13005AFKSH13005AF SEMIHOW REV.A1,Oct 2007KSH130005AFKSH13005AFSwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls4 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted75 WattsTO
8.1. Size:144K shantou-huashan
ksh13005w.pdf N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. KSH13005W HIGH VOLTAGE SWITCH MODE APPLICICATION High Speed Switching Suitable for Switching Regulator and Montor Control ABSOLUTE MAXIMUM RATINGSTa=25 TO-263D2PAKTstgStorage Temperature -55~150TjJunction Temperature
8.2. Size:118K jdsemi
h13005d 2.pdf RH13005D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222
8.3. Size:116K jdsemi
h13005.pdf RH13005 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22
8.4. Size:118K jdsemi
h13005d.pdf RH13005D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222
8.5. Size:120K jdsemi
h13005dl.pdf RH13005DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222
8.6. Size:191K inchange semiconductor
ksh13005.pdf isc Silicon NPN Power Transistor KSH13005DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 0.6(Max) @ I = 2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are pa
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