2SD2212 datasheet, аналоги, основные параметры
Наименование производителя: 2SD2212 📄📄
Маркировка: DR
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 80 MHz
Ёмкость коллекторного перехода (Cc): 25 pf
Статический коэффициент передачи тока (hFE): 1000
Корпус транзистора: SOT89
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Аналоги (замена) для 2SD2212
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2SD2212 даташит
..1. Size:87K rohm
2sd2212 2sd2143 2sd1866.pdf 
2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit mm) Features 1) Built-in zener diode between collector and base. 2SD2212 4.0 2) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1) (2) 3) Built-in resistor between base and emitter. (3) 4)
..2. Size:71K rohm
2sd1866 2sd2212 2sd2212 2sd2143 2sd1866 2sd2397.pdf 
2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" 4.0 2SD2212 1.0 2.5 0.5 loads. (1) 3) Built-in resistor between base and emitter. (2)
..3. Size:907K kexin
2sd2212.pdf 
SMD Type Transistors NPN Transistors 2SD2212 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=50V C 0.42 0.1 0.46 0.1 B R1 R2 1.Base E 2.Collector R1 3.5k R2 300 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCE
8.1. Size:126K sanyo
2sd2219.pdf 
Ordering number EN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, etc. unit mm 2041A Features [2SB1468/2SD2219] Micaless package facilitating mounting. Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) ma
8.2. Size:121K sanyo
2sd2218.pdf 
Ordering number EN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2041A Features [2SB1467/2SD2218] Micaless package facilitating mounting. Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max.
8.3. Size:100K nec
2sd2217.pdf 
DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT mm) frequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC out to drivers such as pulse moto
8.4. Size:63K rohm
2sd2211 2sd1918 2sd1857a.pdf 
2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate)
8.6. Size:63K rohm
2sd2211.pdf 
2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate)
8.7. Size:49K panasonic
2sd2215.pdf 
Power Transistors 2SD2215, 2SD2215A Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 For power amplification 3.0 0.2 Features High collector to base voltage VCBO 1.1 0.1 0.85 0.1 I type package enabling direct soldering of the radiating fin to 0.75 0.1 0.4 0.1 the printed circuit board, etc. of small electronic equipment. 2.3 0.2 Absolute Maximum
8.8. Size:40K panasonic
2sd2216 e.pdf 
Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1462 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Rati
8.9. Size:40K panasonic
2sd2216j e.pdf 
Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1462J 1.60 0.05 0.80 0.80 0.05 0.425 0.425 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. +0.05 0.85 0
8.10. Size:36K panasonic
2sd2216.pdf 
Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1462 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Rati
8.11. Size:42K panasonic
2sd2210.pdf 
Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). 45 Low ON resistance Ron. High foward current transfer ratio hFE. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0
8.12. Size:46K panasonic
2sd2210 e.pdf 
Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). 45 Low ON resistance Ron. High foward current transfer ratio hFE. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0
8.13. Size:32K hitachi
2sd2213.pdf 
2SD2213 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 1. Emitter 15 k 0.5 2. Collector (Typ) (Typ) 1 3. Base 3 2 1 2SD2213 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 8V Collector current
8.14. Size:905K kexin
2sd2210.pdf 
SMD Type Transistors NPN Transistors 2SD2210 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VE
8.15. Size:984K kexin
2sd2211.pdf 
SMD Type Transistors NPN Transistors 2SD2211 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage
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