JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR (NPN) TO-251-3L TO-252-2L FEATURE 1 2 3 power switching applications 1. BASE MAXIMUM RATINGS(Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value UnitVCBO Collector -Base Voltage 600 V 3. EMITTER 1 VCEO Collector-Emi

3DD13002(NPN) TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features power switching applications MAXIMUM RATINGS* TA=25 unless otherwise noted TO-252-2LSymbol Parameter Value UnitsVCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector

NPN R 3DD13002 B1-7 3DD13002 B1-7 VCEO 450 V NPN IC 0.5 A Ptot Ta=25 0.7 W

NPN R 3DD13002 RUD 3DD13003 RUD VCEO 200 V NPN IC 1 A Ptot Ta=25 0.5 W

NPN R 3DD13002 B1 3DD13002 B1 NPN VCEO 400 V IC 0.5 A Ptot Ta=25 0.8 W

SMD Type TransistorsNPN Transistors3DD130021.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=400V Power Switching Applications0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 400 V Emitt

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTORNPN TO-92 FEATURE Power Switching Applications 1.EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 13002B=Device code 13002B Solid dot=Green molding compound device, XXX if none,the normal deviceXXX=Code 1ORDERING INFORMATION Par

3DD13002B(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.322.92 5.33MINFeatures power switching applications 3.43MIN 2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18Symbol Parameter Value Units2.034.192.67VCBO Collector-Base Voltage 600 V 1.141.402.03VCEO Collector-Emitter Voltage 400 V 2.67

3DD13002BSwitch Mode NPN TransistorsTO-921. EMITTER122. COLLECTOR33. BASEABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 400 VdcCollector-Base Voltage VCBO 600VdcEmitter-Base VOltage VEBO6.0 VdcCollector Current IC1.0 AdcPD 1.0Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Tempera

NPN WSRs_sQvfSO{HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13002S ;NSpe MAIN CHARACTERISTICS \ Package IC 1.2AVCEO 400VPC(TO-92) 1WPC(TO-126(S)) 20W(u APPLICATIONS TO-92

MJE13002DG1(BR3DD13002DG1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High freque

MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc

NPN R 3DD13002 B1-7 3DD13002 B1-7 VCEO 450 V NPN IC 0.5 A Ptot Ta=25 0.7 W

NPN R 3DD13002 R1D 3DD13003 R1D VCEO 200 V NPN IC 1 A Ptot Ta=25 0.7 W

NPN R 3DD13002 B1 3DD13002 B1 NPN VCEO 400 V IC 0.5 A Ptot Ta=25 0.8 W

NPN R 3DD13002 B1D 3DD13002 B1D VCEO 400 V NPN IC 0.5 A Ptot Ta=25 0.8 W

NPN R 3DD13002 RUD 3DD13003 RUD VCEO 200 V NPN IC 1 A Ptot Ta=25 0.5 W

NPN R 3DD13002 B1 3DD13002 B1 NPN VCEO 400 V IC 0.5 A Ptot Ta=25 0.8 W