3DD13002 datasheet, аналоги, параметры транзистора

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR (NPN) TO-251-3L TO-252-2L FEATURE 1 2 3 power switching applications 1. BASE MAXIMUM RATINGS(Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V 3. EMITTER 1 VCEO Collector-Emi

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3DD13002(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features power switching applications MAXIMUM RATINGS* TA=25 unless otherwise noted TO-252-2L Symbol Parameter Value Units VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector

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NPN R 3DD13002 B1-7 3DD13002 B1-7 VCEO 450 V NPN IC 0.5 A Ptot Ta=25 0.7 W

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NPN R 3DD13002 RUD 3DD13003 RUD VCEO 200 V NPN IC 1 A Ptot Ta=25 0.5 W

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SMD Type Transistors NPN Transistors 3DD13002 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=400V Power Switching Applications 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 400 V Emitt

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power Switching Applications 1.EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 13002B=Device code 13002B Solid dot=Green molding compound device, XXX if none,the normal device XXX=Code 1 ORDERING INFORMATION Par

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3DD13002B(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 Symbol Parameter Value Units 2.03 4.19 2.67 VCBO Collector-Base Voltage 600 V 1.14 1.40 2.03 VCEO Collector-Emitter Voltage 400 V 2.67

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3DD13002B Switch Mode NPN Transistors TO-92 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 400 Vdc Collector-Base Voltage VCBO 600 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 1.0 Adc PD 1.0 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Tempera

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MJE13002DG1(BR3DD13002DG1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High freque

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MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc

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