2SC4577 - описание и поиск аналогов

SMD Type Transistors NPN Transistors 2SC4577 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=500mA 1 2 Collector Emitter Voltage VCEO=15V +0.05 0.95+0.1 -0.1 0.1 -0.01 Complement to 2SA1753 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - B

Ordering number EN3242 NPN Triple Diffused Planar Silicon Transistor 2SC4578 900V/50mA Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4578] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 Emitter JEDEC TO-220AB 2.55 2.55 EIA

Ordering number EN3252A NPN Triple Diffused Planar Silicon Transistor 2SC4572 800V/20mA Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C High reliability (Adoption of HVP process). [2SC4572] 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 Emitter JEDEC TO-220AB 2.55 2.55 EIAJ SC-46 Spe

Ordering number EN3243 NPN Triple Diffused Planar Silicon Transistor 2SC4579 900V/20mA Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4579] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 Emitter JEDEC TO-220AB 2.55 2.55 EIA

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF (Units mm) OSC/MIX. 2.1 0.1 It is suitable for a high density surface mount assembly since the 1.25 0.1 transistor has been applied super mini mold package. FEATURES 2 High fT 5.

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4570 is a low supply voltage transistor designed for UHF (Units mm) OSC/MIX. 2.1 0.1 It is suitable for a high density surface mount assembly since the 1.25 0.1 transistor has been applied super mini mold package. FEATURES 2 High fT 5.

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4573 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications AB

isc Silicon NPN Darlington Power Transistor 2SC4574 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 1.5A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switch

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4571 DESCRIPTION High Current-Gain Bandwidth Product f = 5.0 GHz TYP. @V = 5 V, I = 5 mA, f = 1.0 GHz T CE C Low C OB 0.9pF TYP. @V = 5 V, I = 0, f = 1.0 MHz CB E 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF oscillator

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4570 DESCRIPTION High Current-Gain Bandwidth Product f = 5.5 GHz TYP. @V = 5 V, I = 5 mA, f = 1.0 GHz T CE C Low C OB 0.7pF TYP. @V = 5 V, I = 0, f = 1.0 MHz CB E 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF oscillator