Биполярный транзистор 2SD2402 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD2402
Маркировка: EX_EY_EZ
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 170 MHz
Ёмкость коллекторного перехода (Cc): 60 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT89
2SD2402 Datasheet (PDF)
2sd2402.pdf
DATA SHEETSILICON TRANSISTOR2SD2402NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SD2402 is a transistor featuring high current PACKAGE DRAWING (UNIT: mm)capacitance in small dimension. This transistor is ideal forDC/DC converters and motor drivers.FEATURES High current capacitance Low collector saturation voltage Co
2sd2402.pdf
SMD Type TransistorsNPN Transistors2SD24021.70 0.1 Features High current capacitance Low collector saturation voltage0.42 0.10.46 0.1 Complementary to 2SB15711.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VE
2sd2406.pdf
2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm High power dissipation: PC = 25 W (Tc = 25C) Good hFE linearity Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VCollector-emitter voltage VCEO 80 VEmitter-base voltage VEBO 5 VCollector current IC 4 A
2sd2403.pdf
DATA SHEETSILICON TRANSISTOR2SD2403NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SD2403 is a transistor featuring high current PACKAGE DRAWING (UNIT: mm)capacitance in small dimension. This transistor is ideal forDC/DC converters and motor drivers.FEATURES High current capacitance Low collector saturation voltage Co
2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf
2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277
2sd2401.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2401 DESCRIPTION With MT-200 package Complement to type 2SB1570 DARLINGTON APPLICATIONS Audio, Series Regulator and General Purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (MT-200) and symbol Absolute maximum r
2sd2401.pdf
Equivalent circuit CBDarlington 2SD2401(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2401 Symbol Conditions 2SD2401 UnitUnit0.26.00.336.4VCBO 160 ICBO VCB=160V
2sd2403.pdf
SMD Type TransistorsNPN Transistors2SD24031.70 0.1 Features High current capacitance Low collector saturation voltage0.42 0.10.46 0.1 Complementary to 2SB15721.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VE
2sd2401.pdf
isc Silicon NPN Darlington Power Transistor 2SD2401DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 7A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1570Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
2sd2400.pdf
isc Silicon NPN Power Transistor 2SD2400DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1569Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
2sd2406.pdf
isc Silicon NPN Power Transistor 2SD2406DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector Power Dissipation-: P = 25W@ T = 25C CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
