Биполярный транзистор H8550
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: H8550
Маркировка: 8550B_8550C_8550D_8550D3
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.5
W
Макcимально допустимое напряжение коллектор-база (Ucb): 40
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 1.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Ёмкость коллекторного перехода (Cc): 20
pf
Статический коэффициент передачи тока (hfe): 85
Корпус транзистора:
SOT89
Аналоги (замена) для H8550
H8550
Datasheet (PDF)
..1. Size:138K shantou-huashan
h8550.pdf 
Shantou Huashan Electronic Devices Co.,Ltd. H8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJunction Temperature150PCCollector Dissipation
..2. Size:796K kexin
h8550.pdf 
SMD Type TransistorsPNP TransistorsH8550 Features1.70 0.1 Collector Power Dissipation: PC=0.5W Collector Current: IC=-1.5A Comlementary to H80500.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -40 VCollector-emitter voltage VCEO -25 VEmitter-base voltage VEBO -
0.1. Size:138K lrc
lh8550plt1g lh8550plt3g lh8550qlt1g lh8550qlt3g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and
0.2. Size:138K lrc
lh8550qlt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and
0.3. Size:138K lrc
lh8550plt1g lh8550qlt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and
0.4. Size:157K lrc
lh8550plt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and
0.5. Size:127K shantou-huashan
h8550s.pdf 
PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H8550S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation
0.6. Size:848K kexin
h8550d.pdf 
SMD Type TransistorsPNP TransistorsH8550D Features1.70 0.1 Collector Power Dissipation: PC=0.5W Collector Current: IC=-1.5A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -40 VCollector-emitter voltage VCEO -25 VEmitter-base voltage VEBO -5 VCollector current IC -1
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