KTC2016 datasheet и подбор замены

 ..1. Size:907K  kexin
 ktc2016.pdf 

SMD Type Transistors NPN Transistors KTC2016 TO-220 9.90 0.20 4.50 0.20 (8.70) +0.10 3.60 0.10 1.30 0.05 Features Low Collector Emitter Saturation Voltage. Complementary to KTA1036 1.27 0.10 1.52 0.10 2 1 3 0.80 0.10 +0.10 0.50 0.05 2.40 0.20 2.54TYP 2.54TYP [2.54 0.20 ] [2.54 0.20 ] 1. Base 2. Collector 10.00 0.20 3. Emit

 8.1. Size:1062K  kexin
 ktc2018.pdf 

SMD Type Transistors NPN Transistors KTC2018 TO-220 9.90 0.20 4.50 0.20 (8.70) +0.10 3.60 0.10 1.30 0.05 Features Low Collector Emitter Saturation Voltage. High Breakdown Voltage Complementary to KTA1038 1.27 0.10 1.52 0.10 2 1 3 0.80 0.10 +0.10 0.50 0.05 2.40 0.20 2.54TYP 2.54TYP [2.54 0.20 ] [2.54 0.20 ] 1. Base 2. Coll

 9.1. Size:48K  kec
 ktc2028.pdf 

SEMICONDUCTOR KTC2028 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Collector-Emitter Saturation Voltage _ A 10.0 + 0.3 _ + B 15.0 0.3 E VCE(sat)=2.0V(Max.). C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L R K _ 3.7 0.2 + L

 9.2. Size:53K  kec
 ktc2022d l.pdf 

SEMICONDUCTOR KTC2022D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A I C J Low Collector-Emitter Saturation Voltage DIM MILLIMETERS VCE(sat)=-2.0V(Max.). _ A 6.60 + 0.2 _ B 6.10 + 0.2 _ C 5.0 + 0.2 _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX _ I 2.30 + 0.2 _ J 0.5 + 0.1 _ H P K 2.00 + 0.20 _ L 0.50 + 0.

 9.3. Size:302K  kec
 ktc2020d l.pdf 

SEMICONDUCTOR KTC2020D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 Low Collector Saturation Voltage _ B 6.10 + 0.2 _ C 5.0 + 0.2 VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. _ D 1.10 + 0.2 _ E 2.70 + 0.2 Straight Lead (IPAK, "L" Suffix) _ F 2.30 + 0.1

 9.4. Size:399K  kec
 ktc2025d l.pdf 

SEMICONDUCTOR KTC2025D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 _ B 6.10 + 0.2 High breakdown voltage VCEO 120V, high current 1A. _ C 5.0 + 0.2 _ D 1.10 + 0.2 Low saturation voltage and good linearity of hFE. _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX C

 9.5. Size:134K  kec
 ktc2036.pdf 

SEMICONDUCTOR KTC2036 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector Saturation Voltage VCE(sat)=1.0V(Max) at IC=2A, IB=0.2A MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 80 V VCEO 60 Collector-Emitter Voltage V VCER 100 VEBO Emitter-Base Voltage 10 V IC Collector Current 3 A IB

 9.6. Size:73K  kec
 ktc200.pdf 

SEMICONDUCTOR KTC200 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(2)=25(Min.), (VCE=2V, IC=200mA). N DIM MILLIMETERS Complementary to KTA200. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTER

 9.7. Size:40K  kec
 ktc2026.pdf 

SEMICONDUCTOR KTC2026 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Collector Saturation Voltage _ A 10.0 0.3 + _ + B 15.0 0.3 VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. E C _ 2.70 0.3 + D Complementary to KTA1046. 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ 13.6

 9.8. Size:444K  kec
 ktc2027.pdf 

SEMICONDUCTOR KTC2027 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Good Linearity of hFE. _ A 10.0 0.3 + _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (Ta=25 ) R K _ 3.7 0.2 + L 1.2+0.25/-0.1 CHA

 9.9. Size:661K  kec
 ktc2020d.pdf 

SEMICONDUCTOR KTC2020D TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. FEATURES Low Collector Saturation Voltage VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. Straight Lead (IPAK, "L" Suffix) Complementary to KTA1040D/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 60 V VC

 9.10. Size:906K  blue-rocket-elect
 ktc2020d.pdf 

KTC2020D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , KTA1040D Low VCE(sat),complementary to KTA1040D. / Applications General purpose amplifier for surface mount application

 9.11. Size:471K  blue-rocket-elect
 ktc2022i.pdf 

KTC2022I(BR3DA2022I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features , KTA1042I(BR3CA1042I) Low collector-emitter saturation voltage, complementary to KTA1042I(BR3CA1042I). / Applications General pu

 9.12. Size:1154K  kexin
 ktc2028.pdf 

DIP Type Transistors NPN Transistors KTC2028 Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features Low Collector-Emitter Saturation Voltage Complementary to KTA1049 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base V

 9.13. Size:996K  kexin
 ktc2026.pdf 

DIP Type Transistors NPN Transistors KTC2026 Unit mm TO-220F 0.20 0.20 0.20 2.54 Features 0.20 0.70 Low saturation voltage Complementary to KTA1046 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 C

 9.14. Size:281K  kexin
 ktc2020d.pdf 

SMD Type Transistors Transistors NPN Transistors KTC2020D TO -252 U nit m m Features +0.1 +0.1 5 6. 5 2. 50-0.1 30-0.1 +0.2 +0.8 5. 0. 30-0.2 50-0.7 Low VCE(sat) 1.0V General purpose amplifier for surface mount applications. Complementary to KTA1040D. 0. 127 +0.1 m ax 0. 80-0.1 2 3 1 +0.1 2. 0. 3 60-0.1 1. BASE +0.1 5 4. 5 60-0.1 2. COLLECTOR 3. EMITTER Ab

 9.15. Size:286K  inchange semiconductor
 ktc2020d.pdf 

isc Silicon NPN Power Transistor KTC2020D DESCRIPTION High Breakdown Voltage- V = 60V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI