Биполярный транзистор 3CA1217 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 3CA1217
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO126F TO225F
3CA1217 Datasheet (PDF)
2sb1217 3ca1217.pdf
2SB1217(3CA1217) PNP /SILICON PNP TRANSISTOR : DC-DC Purpose:It is suitable for DC-DC converter,or driver of solenoid or motor. : ,,, 2SD1818(3DA1818) Features: Low V ,large current, high P ,complementary to 2SD1818(3DA1818). CE(sat) C
3ca1225.pdf
LJ2015-453CA1225 PNP T =25 1.0AP WCT =25 15cI 1.5 ACT 150 jmT -55~150 stgV I =1mA 160 V(BR)CBO CE50V I =10mA 160 V(BR)CEO CE50 V I =1mA 5.0 V(BR)EBO EBI V =160V 1.0 ACBO CBI V =5V 1.0 A
2sb1203 3ca1203.pdf
2SB1203(3CA1203) PNP /SILICON PNP TRANSISTOR Purpose: Relay drivers, high-speed inverters, general high-current switching applications. :f TFeatures: Low V , high current and high f ,
tip127f 3ca127f.pdf
TIP127F(3CA127F) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP122F(3DA122F) Features: Complement to TIP122F(3DA122F). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V
2sb1204 3ca1204.pdf
2SB1204(3CA1204) PNP /SILICON PNP TRANSISTOR Purpose: Relay drivers, high-speed inverters, general high-current switching applications. :f TFeatures: Low V , high current and high f ,
2sb1237 3ca1237.pdf
2SB1237(3CA1237) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. , 2SD1858(3DA1858) Features: Low saturation voltage, complements the 2SD1858(3DA1858). /Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO -40 V
2sb1274 3ca1274.pdf
2SB1274(3CA1274) PNP /SILICON PNP TRANSISTOR Purpose: Low frequency power amplifier applications. Features: High V ,low saturation voltage, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO
2sb1240 3ca1240.pdf
2SB1240(3CA1240) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power amplifier applications. - 2SD1862(3DA1862) Features: Low V ,complements the 2SD1862(3DA1862). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40
tip127 3ca127.pdf
TIP127(3CA127) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP122(3DA122) Features: Complement to TIP122(3DA122). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050