Справочник транзисторов. 3CA1225

 

Биполярный транзистор 3CA1225 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 3CA1225
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 70
   Корпус транзистора: TO252

 Аналоги (замена) для 3CA1225

 

 

3CA1225 Datasheet (PDF)

 ..1. Size:108K  china
3ca1225.pdf

3CA1225 3CA1225

LJ2015-453CA1225 PNP T =25 1.0AP WCT =25 15cI 1.5 ACT 150 jmT -55~150 stgV I =1mA 160 V(BR)CBO CE50V I =10mA 160 V(BR)CEO CE50 V I =1mA 5.0 V(BR)EBO EBI V =160V 1.0 ACBO CBI V =5V 1.0 A

 9.1. Size:300K  lzg
2sb1203 3ca1203.pdf

3CA1225 3CA1225

2SB1203(3CA1203) PNP /SILICON PNP TRANSISTOR Purpose: Relay drivers, high-speed inverters, general high-current switching applications. :f TFeatures: Low V , high current and high f ,

 9.2. Size:260K  lzg
tip127f 3ca127f.pdf

3CA1225 3CA1225

TIP127F(3CA127F) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP122F(3DA122F) Features: Complement to TIP122F(3DA122F). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V

 9.3. Size:261K  lzg
2sb1204 3ca1204.pdf

3CA1225 3CA1225

2SB1204(3CA1204) PNP /SILICON PNP TRANSISTOR Purpose: Relay drivers, high-speed inverters, general high-current switching applications. :f TFeatures: Low V , high current and high f ,

 9.4. Size:265K  lzg
2sb1217 3ca1217.pdf

3CA1225 3CA1225

2SB1217(3CA1217) PNP /SILICON PNP TRANSISTOR : DC-DC Purpose:It is suitable for DC-DC converter,or driver of solenoid or motor. : ,,, 2SD1818(3DA1818) Features: Low V ,large current, high P ,complementary to 2SD1818(3DA1818). CE(sat) C

 9.5. Size:246K  lzg
2sb1237 3ca1237.pdf

3CA1225 3CA1225

2SB1237(3CA1237) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. , 2SD1858(3DA1858) Features: Low saturation voltage, complements the 2SD1858(3DA1858). /Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO -40 V

 9.6. Size:241K  lzg
2sb1274 3ca1274.pdf

3CA1225 3CA1225

2SB1274(3CA1274) PNP /SILICON PNP TRANSISTOR Purpose: Low frequency power amplifier applications. Features: High V ,low saturation voltage, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO

 9.7. Size:299K  lzg
2sb1240 3ca1240.pdf

3CA1225 3CA1225

2SB1240(3CA1240) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power amplifier applications. - 2SD1862(3DA1862) Features: Low V ,complements the 2SD1862(3DA1862). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40

 9.8. Size:212K  lzg
tip127 3ca127.pdf

3CA1225 3CA1225

TIP127(3CA127) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP122(3DA122) Features: Complement to TIP122(3DA122). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

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History: KRC833U | 2N4124 | 40633

 

 
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