START499DNPN RF silicon transistorFeatures High efficiency Common emitter configuration Broadband performances POUT = 29 dBm with 14 dB gain @ 900 MHz Plastic packageSOT-89 Linear and non linear operation Supplied in tape and reel In compliance with the 2002/95/EC european Figure 1. Pin connectiondirectiveDescriptionEmitterThe START499D provi

START499ETRNPN RF silicon transistorFeatures High efficiency High gain Linear and non linear operation Transition frequency 42 GHz Ultra miniature SOT-343 (SC70) lead free SOT-343packageApplications PA for dect or PHS PA stage for wireless LAN and Bluetooth @ 2.5 GHz UHF-VHF pre power amplifierDescriptionSTART499ETR is a product of the

START499NPN Silicon RF Transistor HIGH EFFICIENCY HIGH GAIN LINEAR AND NON LINEAR OPERATION TRANSITION FREQUENCY 42GHz ULTRA MINIATURE SOT343 (SC70) PACKAGESOT343 (SC70)ORDER CODE BRANDINGSTART499TR 499DESCRIPTIONSTART499 is a product of the START family thatprovide the market with a Si state-of-art RF process.Manufactured in St 3rd generation bipolar p

START405NPN Silicon RF Transistor LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V TRANSITION FREQUENCY 42GHz LOW CURRENT CONSUMPTION ULTRA MINIATURE SOT343 PACKAGE SOT343 (SC70)ORDER CODE BRANDINGSTART405TR 405DESCRIPTIONThe START405 is a member of the START familythat provide the state of the art of RF silic

START450NPN Silicon RF Transistor COMPRESSION POINT P1dB=19dBm @ 1.8GHz TRANSITION FREQUENCY 42GHz HIGH LINEARITY ULTRA MINIATURE SOT343(SC70) PACKAGESOT343 (SC70)ORDER CODE BRANDINGSTART450TR 450DESCRIPTIONThe START450 is a member of the START family thatAPPLICATIONSprovide the state of the art of RF silicon process to themarket. Manufacturated in the thi

START420NPN Silicon RF Transistor LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V ULTRA MINIATURE SOT343 PACKAGESOT343 (SC70)ORDER CODE BRANDINGSTART420TR 420DESCRIPTIONThe START420 is a member of the START familythat provide market with the state of the art of RFsilicon process. Manufacturated in the thirdAP