Биполярный транзистор 3DA10E
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 3DA10E
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10
W
Макcимально допустимое напряжение коллектор-база (Ucb): 200
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4
V
Макcимальный постоянный ток коллектора (Ic): 1
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 30
MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора:
TO3
Аналоги (замена) для 3DA10E
3DA10E
Datasheet (PDF)
9.1. Size:134K china
3da100.pdf 
3DA100 NPN A B C D E PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=1mA 25 50 100 150 200 V V(BR)CEO ICE=1mA 25 50 100 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 1.0 mA ICEO VCE=20V
9.2. Size:29K shaanxi
3da101 3da102.pdf 
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA101, 3DA102 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog
9.3. Size:31K shaanxi
3da76 3da10a 3da96.pdf 
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9
9.4. Size:25K shaanxi
3da10.pdf 
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA10NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer
9.5. Size:23K shaanxi
3da10a.pdf 
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA10ANPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: QZJ840611 4. Use for analog computer power output, amplifica
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