SMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsProduct specification2SD965KFeaturesLow collector-emitter saturation voltage VCE(sat)Satisfactory operation performances at high efficiency withthe lowvoltage power supply.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 40 VC

Transistor2SD965Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45

Transistor2SD965Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45

UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Ordering Number Pin Assi

UTC 2SD965 NPN EPITAXIAL SILICON TRANSISTORLOW VOLTAGE HIGH CURRENTNPN TRANSISTORFEATURES*Collector current up to 5A* Collector-Emitter voltage up to 20 VAPPLICATIONS1* Audio amplifier* Flash unit of camera* Switching circuitTO-921:EMITTER 2:COLLECTOR 3: BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETER SYMBOL RATING UNITCollector-base

2SD965A 5 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Audio amplifier 1 Flasg unit of camera 23A Switching circuit ECB C E B DCLASSIFICATION OF hFE(2) Rank Q R SF G230 - 380 Range 340 - 600 560 - 800 H KJ LMilli

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier Flash unit of camera 3. EMITTER Switching circuit MARKING: 965AMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 VCollector-

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package : 965MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value U

2SD 965ATRANSISTOR (NPN) FEATURES SOT-89 Audio amplifier Flash unit of camera 1. BASE Switching circuit MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 3. EMITTER VCBO Collector-Base Voltage 40 V3Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 7 VIC Collector Current -Continuous 5 AC

2SD965 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V

2SD965A SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.62 1.81.41.43. EMITTER 32.64.252.43.75Features 0.8 Audio amplifier MIN0.530.400.480.44 Flash unit of camera 2x)0.13 B0.35 0.371.5 Switching circuit 3.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

WEITRON 2SD965NPN TransistorCOLLECTOR2.P b Lead(Pb)-Free1. EMITTER3.2. COLLECTORBASE3. BASEFEATURES :1.EMITTERTO-92* Flash unit of camera* Switching circuitMAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitsCollector-Base Voltage VCBO 42 VCollector-Emitter Voltage VCEO 22 VEmitter-Base Voltage VEBO 6 VCollector Current -Continu

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier 1 Flash unit of camera 2 3. EMITTER Switching circuit 3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 40 VCollector-Emitter V

2SD965 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,Low VCE(sat),high performance. / Applications Audio frequency output amplifier. / Equivalent Circuit / Pinnin

2SD965T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,Low VCE(sat),high performance. / Applications Audio frequency output amplifier. / Equivalent Circuit

Product specification2SD965-QUnit:mmSOT-891.50 0.14.500.11.800.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with 1 2 3the low-voltage power supply.0.440.10.480.1 0.530.13.000.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

SMD Type TransistorsNPN Transistors2SD965A1.70 0.1 Features Audio amplifier Flash unit of camera Switching circuit0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - C

SMD Type TransistorsNPN Transistors2SD9651.70 0.1 Features Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current Mini Power Type Package0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V

GST2SD965 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 22V amplifier and switch. Collector Current : 5A Lead(Pb)-FreePackages & Pin Assignments TO-92 Pin Description1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Marking GST2SD965F TO-92 (R) / (T) / (V)

2SD965ANPN Transistors3 Features2 Low saturation voltage1.Base1 Large Collector Power Dissipation and Current2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - Contin

DATA SHEET 2SD965/965A NPN PLASTIC ENCAPSULATE TRANSISTORS VOLTAGE 20~30 V CURRENT 5 A FEATURES TO-92SOT-89 LOW VOLTAGE AND HIGH CURRENT EXCELLENT hFE CHARACTERISTICS COLLECTOR-EMITTER VOLTAGE 20V FOR 2SD965 COLLECTOR-EMITTER VOLTAGE 30V FOR 2SD965A LEAD FREE AND HALOGEN-FREE ECMECHANICAL DATA E C B B CASE: SOT-89, TO-92 SOLDERABILITY: MIL-STD-202,

2SD965ASQ NPN Transistor Features SOT-89 Low saturation voltage Large Collector Power Dissipation and Current1. Base 2. Collector 3.EmitterMarking: Q: AQR:ARS:ASAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBOCollector Emitter Voltage V 30 V CEOUnitEm

2SD965TRANSISTOR (NPN) SOT-89FEATURES Low Collector-Emitter Saturation Voltage 1. BASE Large Collector Power Dissipation and Current 2. COLLECTOR Mini Power Type Package 3. EMITTER D: 965MARKINGMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base

2SD965BIPOLAR TRANSISTOR (NPN)FEATURES Large Collector Power Dissipation and Current Low Collector-Emitter Saturation Voltage Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParame