2SC1623-L7 - описание и поиск аналогов

2SC1623 NPN Transistors 3 Features 2 1.Base High DC Current Gain 2.Emitter hFE = 200 TYP. 1 3.Collector VCE = 6.0 V, IC = 1.0 mA Simplified outline(SOT-23) High Voltage VCE O = 50 V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current (D

2SC1623 TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V 2. EMITTER 3. COLLECTOR IC Collector Current -Continuous 100 m

RoHS RoHS COMPLIANT COMPLIANT 2SC1623 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Halogen free available upon request by adding suffix HF Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-23 P Terminals Tin plated leads, solderable per

Features A SOT-23 L6 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 Maximum Ratings @ T = 25 C unless otherwise specified A J J 0.013 0.1

2SC1623-L5 MCC Micro Commercial Components TM 2SC1623-L6 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC1623-L7 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) High DC Cu

www.msksemi.com 2SC1623-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA 1. BASE High voltage VCEO=50V 2. EMITTER SOT 23 3. COLLECTOR CLASSIFICATION OF hFE Rank L4 L5 L6 L7 Range 90-180 135-270 200-400 300-600 Marking L4 L5 L6 L7 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parame

DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS High DC Current Gain hFE = 200 TYP. in millimeters (VCE = 6.0 V, IC = 1.0 mA) 2.8 0.2 High Voltage VCEO = 50 V 1.5 0.65+0.1 0.15 ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Current (TA = 25 C) 2 Collector to

2SC1623 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Epitaxial Transistors Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -55 to +15

2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High DC current gain hFE=200(Typ), VCE=6V, IC=1mA. A L High Voltage VCEO=50V. 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B Range 90

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector

2SC1623 TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V 2. EMITTER 3. COLLECTOR IC Collector Current -Continuous 100 mA

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM1623 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 50 Vdc - C

2SC1623 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain hFE=200(Typ)VCE=6V, IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage Dimensions in inches and (millimeters) 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V I

2SC1623 NPN General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current - Continuous 150 mA Total Device Dissipation FR-5 Board PD 225 mW TA=25 C 1.8 mW/ C Derate above 25 C R JA Thermal Resistance,

FM120-M WILLAS 2SC1623xLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize b

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain hFE=200(Typ)VCE=6V, IC=1mA 2. EMITTER High voltage VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage 50 V VCEO Collector

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2SC1623 TRANSISTOR (NPN) FEATURES High voltage Vceo=50V MARKING L6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base V

2SC1623T(BR3DG1623T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features h , V 2SA812T(BR3CG812T) FE CEO, High hFE and VCEO, complementary pair with 2SA812T(BR3CG812T). / Applications Audio frequency general amp

2SC1623W(BR3DG1623W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features h , V 2SA812W(BR3CG812W) FE CEO, High hFE and VCEO, complementary pair with 2SA812W(BR3CG812W). / Applications Audio frequency general a

LESHAN RADIO COMPANY, LTD. General Purpose Transistors Pb-Free packkage is available L2SC1623SWT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 3 L2SC1623SWT1G L7 3000/Tape&Reel 10000/Tape&Reel L2SC1623SWT3G L7 1 2 MAXIMUM RATINGS SC-70 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V 3 COLLECTOR Emitter-Base Volt

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1G

LESHAN RADIO COMPANY, LTD. L2SC1623QLT1G General Purpose Transistors Series Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC1623QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1

SMD Type Transistors NPN Transistors 2SC1623 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High DC Current Gain 1 2 hFE = 200 TYP. +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 VCE = 6.0 V, IC = 1.0 mA High Voltage VCE O = 50 V 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Colle

2SC1623 TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V 2. EMITTER 3. COLLECTOR IC Collector Current -C

R UMW UMW 2SC1623 SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitte

2SC1623 Plastic-Encapsulate Transistors NPN Silicon FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V SOT-23 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER 3. COLLECTOR VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Curren

SOT-23 Plastic-Encapsulate Transistors Formosa MS 2SC1623 TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA SOT-23 High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER 3. COLLECTOR VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Vol

2SC1623 SOT-23 Plastic-Encapsulate Transistors 2SC1623 TRANSISTOR (NPN) SOT-23 FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO VEBO Emitter-Base Voltage 5

2SC1623 PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES High DC Current Gain hFE=200(Typ.) VCE=6V, IC=1mA High Voltage VCEO = 50V MECHANICAL DATA Available in SOT-23 Package Solderability MIL-STD-202, Method 208 Full RoHS Compliance ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING 2SC1623 - -T3 SOT-23 Tape Reel See Classifica

Jingdao Microelectronics co.LTD 2SC1623 2SC1623 SOT-23 NPN TRANSISTOR 3 FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1.BASE Symbol Parameter Value Unit 2.EMITTER 3.COLLECTOR Collector Base Voltage VCBO 60 V Collector Emit

2SC1623 SOT 323 TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ)VCE=6V, IC=1mA High voltage VCEO=50V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 m

2SC1623 2SC1623 2SC1623 2SC1623 2SC1623 TRANSISTOR(NPN) FEATURE SOT-23 High DC current gain hFE=200(Typ)VCE=6V, IC=1mA 1 BASE High voltage VCEO=50V 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Co

1 2SC1623W TRANSISTOR (NPN) FEATURE SOT- 323 High DC current gain h =200(Typ)V =6V, I =1mA FE CE C High voltage V =50V CEO MARKING L6 MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units V CBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V I Collector Current -Continuous 100 mA C P Collector Power

2SC1623 TRANSISTOR (NPN) FEATURE SOT-23 High DC current gain hFE=200(Typ)VCE=6V, IC=1mA High voltage VCEO=50V 1 BASE 2 EMITTER 3 COLLECTOR MARKING L6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti

2SC1623 BIPOLAR TRANSISTOR (NPN) FEATURES High DC current gain h =200(Typ) V =6V,I =1mA FE CE C High voltage V =50V CEO Surface Mount device Complementary to 2SA812 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless othe

INCHANGE Semiconductor isc Silicon NPN Transistor 2SC1623 DESCRIPTION SOT-23 plastic-encapsulate transistors High DC current gain h =200(TYP) FE @V = 6V, I = 1mA CE C High voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB