PZTA42T1G - описание и поиск аналогов

PZTA42T1G High Voltage Transistor Surface Mount NPN Silicon www.onsemi.com Features PZTA42T1G is Complement to PZTA92T1G SOT-223 PACKAGE S Prefix for Automotive and Other Applications Requiring Unique NPN SILICON Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable HIGH VOLTAGE TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by PZTA42T1/D High Voltage Transistor PZTA42T1 Surface Mount Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT 223 PACKAGE NPN SILICON BASE HIGH VOLTAGE 1 TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value Unit 1 Collector-Emitter Voltage (Open Base) VCEO 300 Vdc 2 3 Collector-Base V

PZTA42T1 High Voltage Transistor Surface Mount NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-223 PACKAGE Compliant NPN SILICON HIGH VOLTAGE TRANSISTOR MAXIMUM RATINGS (TC = 25 C unless otherwise noted) SURFACE MOUNT Rating Symbol Value Unit Collector-Emitter Voltage VCEO 300 Vdc (Open Base) COLLECTOR 2, 4 Collector

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PZTA42 NPN high-voltage transistor Product data sheet 1999 May 21 Supersedes data of 1997 Jun 16 NXP Semiconductors Product data sheet NPN high-voltage transistor PZTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2,4 collector APPLICATIONS 3 emitter Tele

October 2009 MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier Features This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. MPSA42 MMBTA42 PZTA42 C C E E C B B SOT-23 TO-92 SOT-223 Mark 1D E B C Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Valu

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

NPN Silicon High-Voltage Transistors PZTA 42 PZTA 43 High breakdown voltage Low collector-emitter saturation voltage Complementary types PZTA 92, PZTA 93 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 PZTA 42 PZTA 42 Q62702-Z2035 B C E C SOT-223 PZTA 43 PZTA 43 Q62702-Z2036 Maximum Ratings Parameter Symbol Values Unit PZTA 42 PZTA 43 Collect

PZTA42 NPN Silicon High-Voltage Transistors High breakdown voltage 4 3 Low collector-emitter saturation voltage 2 1 Complementary type PZTA92 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package PZTA42 PZTA42 1=B 2=C 3=E 4=C - - SOT223 Maximum Ratings Parameter Symbol Value Unit 300 V Collector-emitter v

UNISONIC TECHNOLOGIES CO., LTD PZTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-emitter voltage VCEO=300V (UTC PZTA42) 1 VCEO=200V (UTC PZTA43) SOT-223 * High current gain * Complement to UTC PZTA92/93 * Collector power dis

PZTA42 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZTA42 is designed for application as a video output to drive color CRT, or as dialer circuit in electronics telephone. Millimeter Millimeter REF. REF. A 4 2 Min. Max. Min. Max. Date Code A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. B C E D 0.02

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA42 SOT-223 Formed SMD Package For use in Telephony and Professional Communication Equipment Complementary PZTA92 ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS Collector Base Voltage VCBO 300 V VCEO Colle

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZTA42 TRANSISTOR (NPN) SOT-223 FEATURES High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. COLLECTOR Complementary type PZTA92(PNP) 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para meter Value Unit MARKING VCBO Collector-

SEMICONDUCTOR PZTA42 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A TELEPHONE APPLICATION. H L 2 FEATURES Complementary to PZTA92. K E B 1 3 J MAXIMUM RATING (Ta=25 ) G F F CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 300 V DIM MILLIMETERS 1 2 3 _ A 6.5 + 0.2 VCEO Collector-Emitter Voltage 300 V C _ B 3.5 + 0.2 C 1.8 MAX

PZTA42 SOT-223 Transistor(NPN) 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features High breakdown voltage Low collector-emitter saturation voltage Complementary type PZTA92(PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V Dimensions in inches and (millimet

PZTA42 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 4 1. BASE 2.COLLECTOR 3.EMITTER BASE 4.COLLECTOR 1 1 2 3 3 SOT-223 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Value Unit V Collector-Emitter Voltage CEO V 300 VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 6 V IC(DC) Collector Current (DC) 500 mA PD Total Device Disspation TA=2

SMD Type Transistors NPN Transistors PZTA42 (KZTA42) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features High breakdown voltage Low collector-emitter saturation voltage 1 2 3 Complementary to PZTA92 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

SHI KUES PZTA42 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2,4 B EMITTER SOT-223 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Value Unit V Collector-Emitter Voltage CEO 300 V Collector-Base Voltage V 300 V CBO Emitter-Base Voltage 6 V 500 mA Collector Current (DC ) Po Total Device Disspation T =25 C 2 w A oc Jun