Справочник транзисторов. SLA4070

 

Биполярный транзистор SLA4070 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: SLA4070
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 1000
   Корпус транзистора: SIP12

 Аналоги (замена) для SLA4070

 

 

SLA4070 Datasheet (PDF)

 ..1. Size:23K  sanken-ele
sla4070.pdf

SLA4070

PNP DarlingtonGeneral purposeSLA4070 External dimensions SLA (12-pin)AAbsolute maximum ratings Electrical characteristics(Ta=25C) (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 100 V ICBO 10 AVCB=100VVCEO 100 V IEBO 10 mA VEB=6VVEBO 6V VCEO 100 V IC=10mAIC 5A hFE 1000 5000 15000 VCE=2V, IC

 8.1. Size:25K  sanken-ele
sla4071.pdf

SLA4070

PNP DarlingtonWith built-in flywheel diodeSLA4071 External dimensions SLA (12-pin)AElectrical characteristicsAbsolute maximum ratings(Ta=25C) (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 100 V ICBO 10 AVCB=100VVCEO 100 V IEBO 10 mA VEB=6VVEBO 6V VCEO 100 V IC=10mAIC 5A hFE 2000 5000 15000

 9.1. Size:23K  sanken-ele
sla4030.pdf

SLA4070

NPN DarlingtonGeneral purposeSLA4030 External dimensions SLA (12-pin)AAbsolute maximum ratings(Ta=25C) Electrical characteristics (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 120 V ICBO 10 AVCB=120VVCEO 100 V IEBO 10 mA VEB=6VVEBO 6V VCEO 100 V IC=10mAIC 4A hFE 2000 VCE=4V, IC=2AICP 6 (PW1ms, Du50%)A VCE(sat) 1.

 9.2. Size:25K  sanken-ele
sla4041.pdf

SLA4070

NPN DarlingtonExternal dimensions SLA (12-pin)With built-in flywheel diode ASLA4041Absolute maximum ratings(Ta=25C) Electrical characteristics (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 200 V ICBO 10 AVCB=200VVCEO 200 V IEBO 10 mA VEB=6VVEBO 6V VCEO 200 V IC=10mAIC 3A hFE 1000 6000 15000 VCE=4V, IC=1.5AICP 6 (PW1

 9.3. Size:24K  sanken-ele
sla4060.pdf

SLA4070

NPN DarlingtonGeneral purpose External dimensions SLA (12-pin)ASLA4060Absolute maximum ratings (Ta=25C) Electrical characteristics (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 120 V ICBO 10 AVCB=120VVCEO 120 V IEBO 10 mA VEB=6VVEBO 6V VCEO 120 V IC=25mAIC 5A hFE 2000 5000 15000 VCE=2V, IC=3AICP 8 (PW1ms, Du50%)A V

 9.4. Size:24K  sanken-ele
sla4031.pdf

SLA4070

NPN DarlingtonExternal dimensions SLA (12-pin)AWith built-in flywheel diodeSLA4031Electrical characteristicsAbsolute maximum ratings (Ta=25C) (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 120 V ICBO 10 AVCB=120VVCEO 120 V IEBO 10 mA VEB=6VVEBO 6V VCEO 120 V IC=25mAIC 4A hFE 2000 5000 15000 VCE=2V, IC=2AICP 6 (PW1m

 9.5. Size:124K  sanken-ele
sla4051.pdf

SLA4070
SLA4070

2-4 Transistor and MOS FET ArraysSpecifications List by Application Sink Driver ArraysBuilt-in Avalanche Diodes, between Collector and BasePart Number Circuit Count VCEO (V)/ VDSS (V) IC (A)/ ID (A) hFE (min) RDS(ON)max () Equivalent Circuit PackageSTA460C 2 6010 6 700 1 SIP10 (STA10Pin)STA301A 3 6010 4 1000 2 SIP8 (STA8Pin)STA413A 4 355 3 500 3 SIP10 (STA10Pin)STA481A

 9.6. Size:124K  sanken-ele
sla4052.pdf

SLA4070
SLA4070

2-4 Transistor and MOS FET ArraysSpecifications List by Application Sink Driver ArraysBuilt-in Avalanche Diodes, between Collector and BasePart Number Circuit Count VCEO (V)/ VDSS (V) IC (A)/ ID (A) hFE (min) RDS(ON)max () Equivalent Circuit PackageSTA460C 2 6010 6 700 1 SIP10 (STA10Pin)STA301A 3 6010 4 1000 2 SIP8 (STA8Pin)STA413A 4 355 3 500 3 SIP10 (STA10Pin)STA481A

 9.7. Size:24K  sanken-ele
sla4061.pdf

SLA4070

NPN DarlingtonWith built-in flywheel diodeSLA4061 External dimensions SLA (12-pin)AElectrical characteristicsAbsolute maximum ratings(Ta=25C) (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 120 V ICBO 10 AVCB=120VVCEO 120 V IEBO 10 mA VEB=6VVEBO 6V VCEO 120 V IC=25mAIC 5A hFE 2000 5000 15000 VCE=2V, IC=3AICP 8 (PW1m

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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