MBT3904DW2T1G - Даташиты. Аналоги. Основные параметры

MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spin-off of DIAGRAM our popular SOT-23/SOT-323 three-leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT-363 SOT-363/SC-88/ six-leaded surface mount package. By putting two discrete de

MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G Dual General Purpose Transistors http //onsemi.com The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is MARKING designed for general purpose amplifier applications and is housed in DIAGRAM the SOT-363 six-leaded surface mount package. By putting two 6 discrete devices in one

MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spin-off of DIAGRAM our popular SOT-23/SOT-323 three-leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT-363 SOT-363/SC-88/ six-leaded surface mount package. By putting two discrete de

MBT3904DW1T1G, MBT3904DW2T1G Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is http //onsemi.com designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two MARKING DIAGRAM discrete devices in one package, this device

MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spin-off of DIAGRAM our popular SOT-23/SOT-323 three-leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT-363 SOT-363/SC-88/ six-leaded surface mount package. By putting two discrete de

MBT3904DW Dual General Purpose Transistor 2 1 3 6 5 4 NPN+NPN Silicon 1 2 3 4 5 6 SOT-363(SC-88) NPN+NPN Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipa

FM120-M WILLAS MMBT3904DW1T1 THRU Dual General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optim

LMBT3904DW1T1G S-LMBT3904DW1T1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V Simplifi

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3904DW1T1G device is a spin off of our popular LMBT3904DW1T1G SOT 23/SOT 323 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT 363 S-LMBT3904DW1T1G six leaded surface mount package. By putting two discrete devices in one package , this device is ideal fo

SMD Type Transistors NPN Transistors MMBT3904DW (KMBT3904DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current -

SMD Type Transistors NPN Transistors MMBT3904DW (KMBT3904DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current -

MMBT3904DW Descriptions Double silicon NPN transistor in a SOT-363 Plastic Package. Features Low current, Low voltage. Applications General purpose amplifier and switching. Equivalent Circuit Pinning PIN 1 4 Emitter PIN 2 5 Base PIN 3 6 Collector hFE Classifications & Marking See Marking Instructions. REV.08 1 of 6 MMBT3904DW Absolute Maximum Ratings(Ta