Справочник транзисторов. MBT3904DW2T1G

 

Биполярный транзистор MBT3904DW2T1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MBT3904DW2T1G
   Маркировка: MJ
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 300 MHz
   Ёмкость коллекторного перехода (Cc): 4 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: SOT363

 Аналоги (замена) для MBT3904DW2T1G

 

 

MBT3904DW2T1G Datasheet (PDF)

 4.1. Size:96K  onsemi
mbt3904dw1 mbt3904dw2 smbt3904dw1 nsvmbt3904dw1.pdf

MBT3904DW2T1G MBT3904DW2T1G

MBT3904DW1,MBT3904DW2,SMBT3904DW1,NSVMBT3904DW1Dual General Purposewww.onsemi.comTransistorsMARKINGThe MBT3904DW1 and MBT3904DW2 devices are a spin-off ofDIAGRAMour popular SOT-23/SOT-323 three-leaded device. It is designed for6general purpose amplifier applications and is housed in the SOT-363SOT-363/SC-88/six-leaded surface mount package. By putting two discrete de

 5.1. Size:908K  onsemi
smbt3904dw1t1g mbt3904dw.pdf

MBT3904DW2T1G MBT3904DW2T1G

MBT3904DW1T1G,MBT3904DW2T1G,SMBT3904DW1T1GDual General PurposeTransistorshttp://onsemi.comThe MBT3904DW1T1G and MBT3904DW2T1G devices are aspin-off of our popular SOT-23/SOT-323 three-leaded device. It isMARKINGdesigned for general purpose amplifier applications and is housed inDIAGRAMthe SOT-363 six-leaded surface mount package. By putting two6discrete devices in one

 5.2. Size:100K  onsemi
nsvmbt3904dw1t3g.pdf

MBT3904DW2T1G MBT3904DW2T1G

MBT3904DW1,MBT3904DW2,SMBT3904DW1,NSVMBT3904DW1Dual General Purposewww.onsemi.comTransistorsMARKINGThe MBT3904DW1 and MBT3904DW2 devices are a spin-off ofDIAGRAMour popular SOT-23/SOT-323 three-leaded device. It is designed for6general purpose amplifier applications and is housed in the SOT-363SOT-363/SC-88/six-leaded surface mount package. By putting two discrete de

 5.3. Size:131K  onsemi
mbt3904dw1-2.pdf

MBT3904DW2T1G MBT3904DW2T1G

MBT3904DW1T1G,MBT3904DW2T1GDual General PurposeTransistorsThe MBT3904DW1T1G and MBT3904DW2T1G devices are aspin-off of our popular SOT-23/SOT-323 three-leaded device. It ishttp://onsemi.comdesigned for general purpose amplifier applications and is housed inthe SOT-363 six-leaded surface mount package. By putting two MARKINGDIAGRAMdiscrete devices in one package, this device

 5.4. Size:100K  onsemi
mbt3904dw1t3g.pdf

MBT3904DW2T1G MBT3904DW2T1G

MBT3904DW1,MBT3904DW2,SMBT3904DW1,NSVMBT3904DW1Dual General Purposewww.onsemi.comTransistorsMARKINGThe MBT3904DW1 and MBT3904DW2 devices are a spin-off ofDIAGRAMour popular SOT-23/SOT-323 three-leaded device. It is designed for6general purpose amplifier applications and is housed in the SOT-363SOT-363/SC-88/six-leaded surface mount package. By putting two discrete de

 5.5. Size:247K  wietron
mbt3904dw.pdf

MBT3904DW2T1G MBT3904DW2T1G

MBT3904DWDual General Purpose Transistor2 13654NPN+NPN Silicon12345 6SOT-363(SC-88)NPN+NPNMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipa

 5.6. Size:346K  willas
mmbt3904dw1t1.pdf

MBT3904DW2T1G MBT3904DW2T1G

FM120-M WILLASMMBT3904DW1T1THRUDual General Purpose TransistorFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optim

 5.7. Size:554K  lrc
lmbt3904dw1t1g lmbt3904dw1t3g.pdf

MBT3904DW2T1G MBT3904DW2T1G

LMBT3904DW1T1GS-LMBT3904DW1T1GGeneral Purpose Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VSimplifi

 5.8. Size:506K  lrc
lmbt3904dw1t1g.pdf

MBT3904DW2T1G MBT3904DW2T1G

LESHAN RADIO COMPANY, LTD.Dual General Purpose Transistors The LMBT3904DW1T1G device is a spinoff of our popularLMBT3904DW1T1GSOT23/SOT323 threeleaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT363S-LMBT3904DW1T1Gsixleaded surface mount package. By putting two discrete devicesin one package , this device is ideal fo

 5.9. Size:538K  kexin
kmbt3904dw.pdf

MBT3904DW2T1G

SMD Type TransistorsNPN TransistorsMMBT3904DW (KMBT3904DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current -

 5.10. Size:770K  kexin
mmbt3904dw.pdf

MBT3904DW2T1G

SMD Type TransistorsNPN TransistorsMMBT3904DW (KMBT3904DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current -

 5.11. Size:1302K  cn shikues
mmbt3904dw.pdf

MBT3904DW2T1G MBT3904DW2T1G

MMBT3904DW Descriptions Double silicon NPN transistor in a SOT-363 Plastic Package. Features Low current, Low voltage.Applications General purpose amplifier and switching. Equivalent Circuit PinningPIN 14Emitter PIN 25Base PIN 36Collector hFE Classifications & Marking See Marking Instructions. REV.081 of 6MMBT3904DW Absolute Maximum Ratings(Ta

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