Справочник транзисторов. BUL416T

 

Биполярный транзистор BUL416T - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BUL416T
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 110 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1600 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO220

 Аналоги (замена) для BUL416T

 

 

BUL416T Datasheet (PDF)

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bul416t.pdf

BUL416T
BUL416T

BUL416THigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplications32 Electronic ballast for fluorescent lighting 1 Switch mode power suppliesTO-220DescriptionThe BUL416T is an high voltage fast-switching NPN power transistor manufactured in planar Figure 1. In

 ..2. Size:211K  inchange semiconductor
bul416t.pdf

BUL416T
BUL416T

INCHANGE Semiconductorisc Silicon NPN Power Transistor BUL416TDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 800V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.5V(Max) @ I = 2ACE(sat) CVery High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in lighting applications a

 8.1. Size:212K  st
bul416.pdf

BUL416T
BUL416T

BUL416HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORn STMicroelectronics PREFERRED SALES Figure 1: PackageTYPEn NPN TRANSISTORn HIGH VOLTAGE CAPABILITYn VERY HIGH SWITCHING SPEEDn FULLY CHARACTERISEZ AT 125 oCn LOW SPREAD OF DYNAMIC PARAMETERS32APPLICATIONS1 TO-220n ELECTRONIC BALLAST FOR FLUORESCENT LIGHTINGn SWITCH MODE POWER SUPPLIESFigure 2: Internal Sch

 8.2. Size:287K  inchange semiconductor
bul416.pdf

BUL416T
BUL416T

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL416 DESCRIPTIONCollectorEmitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max) @ IC= 2A Very High Switching Speed APPLICATIONSDesigned for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMU

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