2N6669 - описание и поиск аналогов

Order this document MOTOROLA by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 (See 2N3773) Darlington Silicon 2N6667 Power Transistors 2N6668 . . . designed for general purpose amplifier and low speed switching applications. High DC Current Gain hFE = 3500 (Typ) @ IC = 4 Adc PNP SILICON Collector Emitter Sustaining Voltage @ 200 mAdc DARLINGTON VCEO(sus) = 60 V

2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE SWITCHING AND 3 AMPLIFIER 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM R1(typ) = 8 k R2(typ) = 120 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Col

2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Military Qualified VDS (V) 90 Low On-Resistence 3.6 RDS(on) ( ) at VGS = 10 V 4 Low Threshold 1.6 V Configuration Single Low Input Capacitance 35 pF Fast Switching Speed 6 ns TO-205AD Low Input and Output Leakage (TO-39

2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Military Qualified VDS (V) 60 Low On-Resistence 1.3 RDS(on) ( ) at VGS = 10 V 3 Low Threshold 1.7 V Configuration Single Low Input Capacitance 35 pF Fast Switching Speed 8 ns Low Input and Output Leakage TO-205AD (TO-3

2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V (D-S) MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 3.6 W D Low Offset Voltage D Direct Logic-Level Interface TTL/CMOS D Low Threshold 1.6 V D Low-Voltage O

Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode (normally- Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertex s well-proven silicon-gate manufacturing Ease of paralleling process. This combination produc

Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode (normally- Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure and Low power drive requirement Supertex s well-proven silicon-gate manufacturing process. Ease of paralleling This combination produ

2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0 1.5A 2N6660 90V 4.0 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Informa

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661M1A VDSS = 90V , ID = 1.0A, RDS(ON) = 4.0 Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO-257AA Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source V

2N6660CSM4 MECHANICAL DATA N CHANNEL Dimensions in mm (inches) 1.40 0.15 5.59 0.13 (0.055 0.006) ENHANCEMENT MODE (0.22 0.005) 0.25 0.03 (0.01 0.001) MOSFET 0.23 rad. (0.009) V 60V DSS 3 2 I 1.0A D 0.23 4 1 min. (0.009) R 3.0 DS(on) 1.02 0.20 2.03 0.20 FEATURES (0.04 0.008) (0.08 0.008) Faster switching Low Ciss

2N6661CSM4 MECHANICAL DATA N CHANNEL Dimensions in mm (inches) 1.40 0.15 5.59 0.13 ENHANCEMENT MODE (0.055 0.006) (0.22 0.005) 0.25 0.03 (0.01 0.001) MOSFET 0.23 rad. V 90V (0.009) DSS 3 2 I 0.9A D 0.23 4 1 min. (0.009) R 4.0 DS(on) FEATURES 1.02 0.20 2.03 0.20 (0.04 0.008) (0.08 0.008) Faster switching Low Ciss

2N6661DCSM MECHANICAL DATA DUAL N CHANNEL Dimensions in mm (inches) ENHANCEMENT MODE 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) MOSFET 2 3 VDSS 90V 1 4 ID 0.9A A 0.23 6 5 rad. RDS(on) 4.0 (0.009) 6.22 0.13 A = 1.27 0.13 (0.05 0.005) (0.245 0.005) FEATURES Faster switching Low Ciss In

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660C4 VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0 Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Surface Mounted Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source V

A B O C A S E M I C O N D U C T O R C O R P A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2N6666 DESCRIPTION High DC Current Gain- hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min) Low Collector-Emitter Saturation Voltage- VCE(sat) = -2.0V(Max)@ IC= -3A Complement to Type 2N6386 APPLICATIONS Designed for general purpo