Биполярный транзистор CPH5905 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: CPH5905
Маркировка: 1E
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 55 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 1.7 pf
Статический коэффициент передачи тока (hfe): 135
Корпус транзистора: SOT25
CPH5905 Datasheet (PDF)
cph5905.pdf
Ordering number : ENN7177CPH5905NPN Epitaxial Planar Silicon TransistorN-Channel Silicon Junction FETCPH5905High-Frequency Amplifier, AM Amplifier,Low-Frequency Amplifier ApplicationsFeatures Package Dimensions Composite type with J-FET and NPN transistors unit : mmcontained in the CPH5 package, improving the 2196mounting efficiency greatly.[CPH5905] The CPH5905 co
cph5905.pdf
Ordering number : EN7177BCPH5905N-Channel JFET and NPN Bipolar Transistorhttp://onsemi.com15V, 10 to 32mA, 50V, 150mA, Composite type, CPH5Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mountingefficiency greatly The CPH5905 contains a 2SK3357-equivalent chip and a 2SC4639-equivalent chip in one package Drain and em
cph5901.pdf
CPH5901Ordering number : EN8278BSANYO SemiconductorsDATA SHEETTR : NPN Epitaxial Planar Silicon TransistorFET : N-Channel Silicon Junction FETCPH5901High-Frequency Amplifier. AM Amplifier.Low-Frequency Amplifier ApplicationsFeatures Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mountingefficiency greatly The CPH5901 is f
cph5902.pdf
Ordering number : ENN6962CPH5902NPN Epitaxial Planar Silicon TransistorN-Channel Silicon Junction FETCPH5902High-Frequency Amplifier, AM Amplifier,Low-Frequency Amplifier ApplicationsFeatures Package Dimensions Composite type with J-FET and NPN transistors unit : mmcontained in the CPH5 package, improving the 2196mounting efficiency greatly.[CPH5902] The CPH5902 co
cph5901.pdf
Ordering number : EN8278BCPH5901N-Channel JFET and NPN Bipolar Transistorhttp://onsemi.com15V, 6 to 20mA, 50V, 150mA, Composite type CPH5Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mountingefficiency greatly The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one p
cph5902.pdf
Ordering number : EN6962CCPH5902N-Channel JFET and NPN Bipolar Transistorhttp://onsemi.com15V, 10 to 32mA, 50V, 150mA, Composite type CPH5Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mountingefficiency greatly The CPH5902 contains a 2SK2394-equivalent chip and a 2SC4639-equivalent chip in one package Drain and emi
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050