BUX24S datasheet, аналоги, основные параметры

Наименование производителя: BUX24S

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 250 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимальный постоянный ток коллектора (Ic): 20 A

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 8 MHz

Статический коэффициент передачи тока (hFE): 15

Корпус транзистора: TO3

 Аналоги (замена) для BUX24S

- подборⓘ биполярного транзистора по параметрам

 

BUX24S даташит

 ..1. Size:11K  semelab
bux24s.pdfpdf_icon

BUX24S

BUX24S Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.1. Size:11K  semelab
bux24a.pdfpdf_icon

BUX24S

BUX24A Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.2. Size:11K  semelab
bux24x.pdfpdf_icon

BUX24S

BUX24X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.3. Size:208K  inchange semiconductor
bux24.pdfpdf_icon

BUX24S

isc Silicon NPN Power Transistor BUX24 DESCRIPTION Low Collector Saturation Voltage- High Switching Speed High Current Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for use in switching and linear applications in military and industrial equipment. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETE

Другие транзисторы: BUX50SMD, BUX50SMD05, BUX51SMD, BUX51SMD05, BUX52SMD, BUX52SMD05, BUX21A, BUX24A, TIP42C, BUX24X, BUX25S, BUX40S, BUX45X, BUX47SMD, RN2968, RN2970, RN2973HFE