Биполярный транзистор BC477DCSM - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BC477DCSM
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.36 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: LCC2
Аналоги (замена) для BC477DCSM
BC477DCSM Datasheet (PDF)
bc477dcsm.pdf
BC477DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 80V CEO6.22 0.13 A = 1.27 0.13I = 0.1A C(0.05
bc477 bc478 bc479.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
bc477ycsm.pdf
BC477YCSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 80V A =(0.04 0.004
bc477ydcsm.pdf
BC477YDCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 80V CEO6.22 0.13 A = 1.27 0.13I = 0.1A C(0.0
bc477xdcsm.pdf
BC477XDCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 80V CEO6.22 0.13 A = 1.27 0.13I = 0.1A C(0.0
bc477b.pdf
BC477BDimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 80V 0.48 (0.019)0.41 (0.016)dia.IC = 0.1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JAN
bc477.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR TRANSISTOR BC477TO-18General Purpose Audio AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)DESCRIPTION SYMBOL VALUE UNITVCES 90 VCollector -Emitter VoltageVCEO 80 VCollector -Emitter VoltageVEBO 6.0 VEmitter Base VoltageIC 150 mACollector Current Ptot 0.3Pow
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050