2N6704 - описание и поиск аналогов

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6704 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 130V(Min) High Switching Speed Low Saturation Voltage APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 )

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6707 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 C) DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5V Collector Current Continuous IC 1.

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6705 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5V Collector Current Continuous IC 1

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6702 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for converters,inverters, pulse-width-modulated regulators and a variety of power switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting b

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6703 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switc