BC109DCSM - описание и поиск аналогов

SILICON EPITAXIAL NPN TRANSISTOR BC109DCSM Dual Silicon Planar NPN Transistors Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) Each Side Total Device VCBO Collector Base Vol

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors 1997 Sep 03 Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max.

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors 1997 Sep 03 Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max.

BC107 BC108-BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. The complementary PNP types are re- spectively the BC177, BC178 and BC179. TO-18 INTERNAL SCHEMATI

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BC107/A/B/C BC108/A/B/C BC109/A/B/C TO-18 Metal Can Package Low Noise General Purpose Audio Amplifiers ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BC107 BC108 BC109 UNIT VCEO Collector Emitter Voltage 45 25 V 25 VCBO Collector Base Voltage 50 30 V 30 VEBO Em

isc General Purpose NPN Small Signal Transistor BC109 DESCRIPTION With TO-18 package. High DC Current Gain- h 200-800@ (V = 5V, I = 2mA) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications ABSOLUTE MAXIMUM RATINGS(T =25 )