Справочник транзисторов. BC109DCSM

 

Биполярный транзистор BC109DCSM - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BC109DCSM
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 150 MHz
   Ёмкость коллекторного перехода (Cc): 6 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: LCC2

 Аналоги (замена) для BC109DCSM

 

 

BC109DCSM Datasheet (PDF)

 ..1. Size:155K  semelab
bc109dcsm.pdf

BC109DCSM
BC109DCSM

SILICON EPITAXIAL NPN TRANSISTOR BC109DCSM Dual Silicon Planar NPN Transistors Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) Each Side Total Device VCBO Collector Base Vol

 9.1. Size:49K  philips
bc107 bc108 bc109.pdf

BC109DCSM
BC109DCSM

DISCRETE SEMICONDUCTORSDATA SHEETM3D125BC107; BC108; BC109NPN general purpose transistors1997 Sep 03Product specificationSupersedes data of 1997 Jun 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistors BC107; BC108; BC109FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max.

 9.2. Size:49K  philips
bc107 bc108 bc109 4.pdf

BC109DCSM
BC109DCSM

DISCRETE SEMICONDUCTORSDATA SHEETM3D125BC107; BC108; BC109NPN general purpose transistors1997 Sep 03Product specificationSupersedes data of 1997 Jun 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistors BC107; BC108; BC109FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max.

 9.3. Size:100K  st
bc107-bc108-bc109.pdf

BC109DCSM
BC109DCSM

BC107BC108-BC109LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERSDESCRIPTIONThe BC107, BC108 and BC109 are silicon planarepitaxial NPN transistors in TO-18 metal case.Theyare suitable for use in driver stages, low noise inputstages and signal processing circuits of televisionreceivers. The complementary PNP types are re-spectively the BC177, BC178 and BC179.TO-18INTERNAL SCHEMATI

 9.4. Size:120K  central
bc107 bc108 bc109.pdf

BC109DCSM
BC109DCSM

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

 9.5. Size:791K  aeg-telefunken
bc107 bc108 bc109 bc147 bc148 bc149.pdf

BC109DCSM
BC109DCSM

 9.6. Size:142K  cdil
bc107 bc108 bc109 a b c.pdf

BC109DCSM
BC109DCSM

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTORS BC107/A/B/CBC108/A/B/CBC109/A/B/CTO-18Metal Can PackageLow Noise General Purpose Audio AmplifiersABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BC107 BC108 BC109 UNITVCEOCollector Emitter Voltage 45 25 V25VCBOCollector Base Voltage 50 30 V30VEBOEm

 9.8. Size:213K  inchange semiconductor
bc109.pdf

BC109DCSM
BC109DCSM

isc General Purpose NPN Small Signal Transistor BC109DESCRIPTIONWith TO-18 package.High DC Current Gain-: h :200-800@ (V = 5V, I = 2mA)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned For Low Noise General Purpose Amplifiers,Driver Stages and Signal Processing ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top