2SAR562F3 - описание и поиск аналогов

 ..1. Size:372K  rohm
 2sar562f3.pdf 

2SAR562F3 Datasheet PNP -6A -30V Middle Power Transistor lOutline HUML2020L3 Parameter Value Collector VCEO -30V Collector Base IC -6A Emitter Emitter Base lFeatures 2SAR562F3 1) Suitable for Middle Power Driver 2) Low VCE(sat) VCE(sat)= -300mV(Max.) (IC/IB= -3A/ -60mA) 3) High collector current IC = -6A (max) , ICP = -7A (max) 4) Leadless small SMD package "HU

 9.1. Size:1516K  rohm
 2sar553pfra.pdf 

2SAR553P FRA Datasheet Middle Power Transistor (-50V / -2A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -2A MPT3 lFeatures lInner circuit l l 1) Low saturation voltage VCE(sat) = -400mV (Max.) (IC/ IB=-700mA/-35mA) 2) High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITC

 9.2. Size:1841K  rohm
 2sar513p5.pdf 

2SAR513P5 Datasheet Middle Power Transistors(-50V / -1A) lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -1A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=-400mV(Max.) (IC/IB=-500mA/-25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging spe

 9.3. Size:234K  rohm
 2sar513p.pdf 

Midium Power Transistors (-50V / -1A) 2SAR513P Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol MC Driver Packaging specifications Inner circuit (Unit mm) Package T

 9.4. Size:1816K  rohm
 2sar552p5.pdf 

2SAR552P5 Datasheet Middle Power Transistors (-30V / -3A) lOutline l SOT-89 Parameter Value SC-62 VCEO -30V IC -3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat) =-400mV (Max.) (IC/IB=-1A/-50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging sp

 9.5. Size:236K  rohm
 2sar514p.pdf 

Midium Power Transistors (-80V / -0.7A) 2SAR514P Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -300mA / -15mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol MD Driver Packaging specifications Inner circuit (Unit mm) Package

 9.6. Size:1080K  rohm
 2sar554r.pdf 

2SAR554R Datasheet PNP -1.5A -80V Middle Power Transistor lOutline l SOT-346T Parameter Value SC-96 VCEO -80V IC -1.5A TSMT3 lFeatures lInner circuit l l 1)Suitable for Middle Power Driver 2)Complementary NPN Types 2SCR554R 3)Low VCE(sat) VCE(sat)=-400mV (Max.) (IC/IB=-500mA/-25mA) lApplication l LOW FREQUENCY AMPLIFIER, H

 9.7. Size:1321K  rohm
 2sar513pfra.pdf 

2SAR513P 2SAR513PFRA Datasheet PNP -1.0A -50V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -50V Base IC Collector -1.0A Emitter 2SAR513P 2SAR513PFRA lFeatures (SC-62) 1) Suitable for Middle Power Driver 2SCR513PFRA 2) Complementary NPN Types 2SCR513P 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -500mA/ -25mA) 4) Lead F

 9.8. Size:1420K  rohm
 2sar502eb 2sar502ub 2sar502u3.pdf 

 9.9. Size:166K  rohm
 2sar523eb.pdf 

General purpose transistor(-50V,-0.1A) 2SAR523M/2SAR523EB/2SAR523UB Structure Dimensions (Unit mm) PNP silicon epitaxial planar transistor VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol PB Applications EMT3F Switch, LED driver (3) Packaging specifications (1) (2) Package VMT3 EMT3F UMT3F Abbreviated symbol PB Packaging

 9.10. Size:1073K  rohm
 2sar514r.pdf 

2SAR514R Datasheet PNP -0.7A -80V Middle Power Transistor lOutline l SOT-346T Parameter Value SC-96 VCEO -80V IC -0.7A TSMT3 lFeatures lInner circuit l l 1)Suitable for Middle Power Driver 2)Complementary NPN Types 2SCR514R 3)Low saturation voltage VCE(sat)=-400mV(Max.) (IC/IB=-300mA/-15mA) lApplication l LOW FREQUENCY AMP

 9.11. Size:1317K  rohm
 2sar552pfra.pdf 

2SAR552P 2SAR552PFRA Datasheet PNP -3.0A -30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -30V Base IC -3.0A Collector Emitter 2SAR552PFRA 2SAR552P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR552P 2SCR552PFRA 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -1A/ -50mA) 4) Lead Fr

 9.12. Size:391K  rohm
 2sar553r.pdf 

2SAR553R Datasheet PNP -2.0A -50V Middle Power Transistor lOutline TSMT3 Parameter Value Collector VCEO -50V Base IC -2.0A Emitter 2SAR553R lFeatures (SC-96) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR553R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -700mA/ -35mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Moto

 9.13. Size:1560K  rohm
 2sar533pfra.pdf 

2SAR533P FRA Datasheet Middle Power Transistor(-50V / -3A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage VCE(sat)=-400mV(Max.) (IC/IB=-1A/-50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPack

 9.14. Size:1570K  rohm
 2sar512pfra.pdf 

2SAR512P FRA Datasheet Middle Power Transistor(-30V/-2A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO -30V IC -2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage VCE(sat)=-400mV(Max.) (IC/IB=-700mA/-35mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPac

 9.15. Size:1667K  rohm
 2sar533p.pdf 

2SAR533P Data Sheet PNP -3.0A -50V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -50V Base IC -3.0A Collector Emitter 2SAR533P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR533P 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplicatio

 9.16. Size:685K  rohm
 2sar554p.pdf 

2SAR554P Data Sheet PNP -1.5A -80V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -80V Base IC -1.5A Collector Emitter 2SAR554P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR554P 3) Low VCE(sat) VCE(sat)= -0.40V(Max.) (IC/IB= -500mA/ -25mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplica

 9.17. Size:1803K  rohm
 2sar512p5.pdf 

2SAR512P5 Datasheet Medium Power Transistors(-30V/-2A) lOutline l SOT-89 Parameter Value SC-62 VCEO -30V IC -2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=-0.4V(Max.) (IC/IB=-700mA/-35mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specif

 9.18. Size:421K  rohm
 2sar533d.pdf 

Midium Power Transistors ( 50V / 3A) 2SAR533D Features Dimensions (Unit mm) 1) Low saturation voltage, typically CPT3 6.5 5.1 2.3 VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 0.5 (2) 2) High speed switching 0.75 (3) (1) Structure 0.65 (1) Base 0.9 2.3 2.3 (1) (2) (3) 0.5 PNP Silicon epitaxial planar transistor (2) Collector 1.0 (3) Emitter In

 9.19. Size:1557K  rohm
 2sar553phzg.pdf 

2SAR553P HZG Middle Power Transistor (-50V / -2A) Datasheet lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage VCE(sat) = -400mV (Max.)(IC/ IB=-700mA/-35mA) 2)High speed switching 3)AEC-Q101 Qualified lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

 9.20. Size:777K  rohm
 2sar544p.pdf 

2SAR544P Data Sheet PNP -2.5A -80V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -80V Base Collector IC -2.5A Emitter 2SAR544P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR544P 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplication

 9.21. Size:424K  rohm
 2sar502eb-ub.pdf 

2SAR502EB / 2SAR502UB Datasheet PNP -500mA -30V General Purpose Transistors lOutline EMT3F UMT3F Parameter Value Collector Collector VCEO -30V Base Base IC -500mA Emitter Emitter 2SAR502UB 2SAR502EB (SC-85) (SC-89) lFeatures 1) General Purpose. 2) Complementary NPN Types 2SCR502EB (EMT3F) / 2SCR502UB (UMT3F) 3) Large collector current Ic=max.500mA 4) Lo

 9.22. Size:800K  rohm
 2sar572d.pdf 

2SAR572D Datasheet PNP -5.0A -30V Middle Power Transistor lOutline l Parameter Value CPT VCEO -30V IC -5A 2SAR572D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary NPN Types 2SCR572D. 3) Low VCE(sat) VCE(sat)=-0.40V(Max.). (IC/IB=-2A/-100mA) 4) Lead

 9.23. Size:1324K  rohm
 2sar514pfra.pdf 

2SAR514PFRA 2SAR514P Datasheet PNP -0.7A -80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -80V Base Collector IC -0.7A Emitter 2SAR514P 2SAR514PFRA lFeatures (SC-62) 1) Suitable for Middle Power Driver 2SCR514PFRA 2) Complementary NPN Types 2SCR514P 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -300mA/ -15mA) 4) Lead

 9.24. Size:1671K  rohm
 2sar586d3.pdf 

2SAR586D3 PNP -5.0A -80V Power Transistor Datasheet lOutline l Parameter Value DPAK VCEO -80V IC -5A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary NPN Types 2SCR586D3. 3) Low VCE(sat) VCE(sat)=-320mV(Max.). (IC/IB=-2A/-100mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging spec

 9.25. Size:402K  rohm
 2sar544d.pdf 

Midium Power Transistors (-80V / -2.5A) 2SAR544D Features Dimensions (Unit mm) 1) Low saturation voltage, typically CPT3 6.5 (SC-63) 5.1 2.3 VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 0.5 2) High speed switching Structure PNP Silicon epitaxial planar transistor 0.75 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 Applications 1.0 Driver Packaging spe

 9.26. Size:1501K  rohm
 2sar544pfra.pdf 

2SAR544P 2SAR544PFRA Data Sheet PNP -2.5A -80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -80V Base Collector IC -2.5A Emitter 2SAR544PFRA 2SAR544P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR544P 2SCR544PFRA 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA) 4) Lead Free/RoHS

 9.27. Size:714K  rohm
 2sar542f3.pdf 

2SAR542F3 Datasheet PNP -3.0A -30V Middle Power Transistor lOutline l Parameter Value HUML2020L3 VCEO -30V IC -3A 2SAR542F3 lFeatures l lInner circuit l 1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(sat)=-0.20V(Max.). (IC/IB=-1A/-50mA) 3) High collector current. IC=-3A(max),

 9.28. Size:697K  rohm
 2sar542p.pdf 

2SAR542P Data Sheet PNP -5.0A -30V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -30V Base Collector IC -5.0A Emitter 2SAR542P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR542P 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -2A/ -100mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications

 9.29. Size:1811K  rohm
 2sar554p5.pdf 

2SAR554P5 Datasheet Middle Power Transistors (-80V / -1.5V) lOutline l SOT-89 Parameter Value SC-62 VCEO -80V IC -1.5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=-400mV (Max.) (IC/IB=-500mA/-25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackag

 9.30. Size:377K  rohm
 2sar512r.pdf 

2SAR512R Datasheet PNP -2.0A -30V Middle Power Transistor lOutline TSMT3 Parameter Value Collector VCEO -30V Base IC -2.0A Emitter 2SAR512R (SC-96) lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR512R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -700mA/ -35mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Moto

 9.31. Size:166K  rohm
 2sar522eb.pdf 

General purpose transistor(-20V,-0.2A) 2SAR522M / 2SAR522EB / 2SAR522UB Structure Dimensions (Unit mm) PNP silicon epitaxial planar transistor VMT3 Features Complements the 2SCR522M / 2SCR522EB / 2SCR522UB. Abbreviated symbol PC Applications EMT3F Switch, LED driver (3) Packaging specifications Package VMT3 EMT3F UMT3F (1) (2) Packaging Type Taping Tap

 9.32. Size:488K  rohm
 2sar543r.pdf 

Midium Power Transistors (-50V / -3A) 2SAR543R Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor TSMT3 Features 1) Low saturation voltage (3) VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching (1) (2) (1) Base Applications (2) Emitter (3) Collector Abbreviated symbol MR Driver Packaging specifications Inner

 9.33. Size:220K  rohm
 2sar512p.pdf 

Medium Power Transistors (-30V / -2A) 2SAR512P Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor MPT3 Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA) (1) (2) (3) 2) High speed switching (1)Base Applications (2)Collector Abbreviated symbol MB (3)Emitter Driver Packaging specifications Inner circuit

 9.34. Size:1463K  rohm
 2sar573dfhg.pdf 

2SAR573D FHG Datasheet PNP -3.0A -50V Middle Power Transistor AEC-Q101 Qualified lOutline l TO-252 Parameter Value SC-63 VCEO -50V IC -3A CPT lFeatures lInner circuit l l 1) Suitable for Middle Power Driver. 2) Complementary NPN Types 2SCR573D. 3) Low VCE(sat) VCE(sat)=-0.40V(Max.). (IC/IB=-1A/-50mA) lApplication l

 9.35. Size:617K  rohm
 2sar553p.pdf 

2SAR553P Data Sheet PNP -2.0A -50V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -50V Base IC Collector -2.0A Emitter 2SAR553P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR553P 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -700mA/ -35mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplica

 9.36. Size:2089K  rohm
 2sar523m 2sar523eb 2sar523ub.pdf 

2SAR523M / 2SAR523EB / 2SAR523UB Datasheet PNP -100mA -50V General Purpose Transistor lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -100mA 2SAR523M 2SAR523EB (VMT3) (EMT3F) SOT-323FL 2SAR523UB (UMT3F) lFeatures lInner ci

 9.37. Size:1840K  rohm
 2sar553p5.pdf 

2SAR553P5 Datasheet Midium Power Transistors (-50V / -2A) lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -2A MPT3 lFeatures lInner circuit l l 1) Low saturation voltage, typically VCE(sat) = -0.4V (Max.) (IC/ IB= -700mA / -35mA) 2) High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging

 9.38. Size:1510K  rohm
 2sar542pfra.pdf 

2SAR542P FRA Datasheet Middle Power Transistor (-30V / -5A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO -30V IC -5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage VCE(sat) =-400mV (Max.) (IC/IB=-2A/-100mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING l

 9.39. Size:1659K  rohm
 2sar572d3.pdf 

2SAR572D3 PNP -5.0A -30V Power Transistor Datasheet lOutline l Parameter Value DPAK VCEO -30V IC -5A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary NPN Types 2SCR572D3. 3) Low VCE(sat) VCE(sat)=-400mV(Max.). (IC/IB=-2A/-100mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging spec

 9.40. Size:1579K  rohm
 2sar513r.pdf 

2SAR513R Datasheet PNP -1.0A -50V Middle Power Transistor lOutline l SOT-346T Parameter Value SC-96 VCEO -50V IC -1A TSMT3 lFeatures lInner circuit l l 1)Suitable for Middle Power Driver 2)Complementary NPN Types 2SCR513R 3)Low VCE(sat) VCE(sat)=-400mV(Max.) (IC/IB=-500A/-25mA) lApplication l LOW FREQUENCY AMPLIFIER, HIGH

 9.41. Size:801K  rohm
 2sar574d.pdf 

2SAR574D Datasheet PNP -2.0A -80V Middle Power Transistor lOutline l Parameter Value CPT VCEO -80V IC -2A 2SAR574D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary NPN Types 2SCR574D. 3) Low VCE(sat) VCE(sat)=-0.40V(Max.). (IC/IB=-1A/-50mA) 4) Lead

 9.42. Size:1314K  rohm
 2sar554pfra.pdf 

2SAR554P 2SAR554PFRA Datasheet PNP -1.5A -80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -80V Base IC -1.5A Collector Emitter 2SAR554PFRA 2SAR554P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR554P 2SCR554PFRA 3) Low VCE(sat) VCE(sat)= -0.40V(Max.) (IC/IB= -500mA/ -25mA) 4) Lead

 9.43. Size:1823K  rohm
 2sar533p5.pdf 

2SAR533P5 Datasheet Medium Power Transistors(-50V / -3A) lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=-400mV(Max.) (IC/IB=-1A/-50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specif

 9.44. Size:591K  rohm
 2sar542d.pdf 

Midium Power Transistors (-30V / -5A) 2SAR542D Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor CPT3 (SC-63) Features 1) Low saturation voltage VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching (1) Base 9 Applications (2) Collector (3) Emitter

 9.45. Size:236K  rohm
 2sar552p.pdf 

Midium Power Transistors (-30V / -3A) 2SAR552P Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol MF Driver Packaging specifications Inner circuit (Unit mm) Package Tapi

 9.46. Size:516K  rohm
 2sar543d.pdf 

Midium Power Transistors (-50V / -4A) 2SAR543D Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor CPT3 (SC-63) Features 1) Low saturation voltage VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching (1) Base 9 Applications (2) Collector (3) Emitter

 9.47. Size:801K  rohm
 2sar573d.pdf 

2SAR573D Datasheet PNP -3.0A -50V Middle Power Transistor lOutline l Parameter Value CPT VCEO -50V IC -3A 2SAR573D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary NPN Types 2SCR573D. 3) Low VCE(sat) VCE(sat)=-0.40V(Max.). (IC/IB=-1A/-50mA) 4) Lead

 9.48. Size:1350K  rohm
 2sar544r.pdf 

2SAR544R Datasheet PNP -2.5A -80V Middle Power Transistor lOutline l SOT-346T Parameter Value SC-96 VCEO -80V IC -2.5A TSMT3 lFeatures lInner circuit l l 1)Suitable for Middle Power Driver 2)Complementary NPN Types 2SCR544R 3)Low VCE(sat) VCE(sat)=-400mV (Max.) (IC/IB=-1A/-50mA) lApplication l LOW FREQUENCY AMPLIFIER, HIGH

 9.49. Size:190K  inchange semiconductor
 2sar586d.pdf 

isc Silicon PNP Power Transistor 2SAR586D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V -0.32V@(I =-2A,I =-100mA) CE(sat) C B Complementary NPN types 2SCR586D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 9.50. Size:177K  inchange semiconductor
 2sar572d.pdf 

isc Silicon PNP Power Transistor 2SAR572D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V -0.4V@(I =-2A,I =-0.1A) CE(sat) C B Complementary NPN types 2SCR572D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 9.51. Size:190K  inchange semiconductor
 2sar574d.pdf 

isc Silicon PNP Power Transistor 2SAR574D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V -0.4V@(I =-1A,I =-50mA) CE(sat) C B Complementary NPN types 2SCR574D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 9.52. Size:178K  inchange semiconductor
 2sar573d.pdf 

isc Silicon PNP Power Transistor 2SAR573D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V -0.4V@(I =-1A,I =-50mA) CE(sat) C B Complementary NPN types 2SCR573D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE