2SB1073R - описание и поиск аналогов

 0.1. Size:196K  mcc
 2sb1073r-q.pdf 

MCC Micro Commercial Components TM 2SB1073-Q 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB1073-R Phone (818) 701-4933 Fax (818) 701-4939 Features Low collector to emitter saturation voltage VCE(sat) Silicon Large peak collector current ICP PNP epitaxial planer Mini power type package Lead Free Finish/RoHS Compliant ("P" Suffix desi

 7.1. Size:35K  panasonic
 2sb1073 e.pdf 

Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4

 7.2. Size:35K  panasonic
 2sb1073.pdf 

Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4

 7.3. Size:581K  jiangsu
 2sb1073.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1073 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Large peak collector current IC 2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 Symbol Parameter Value Unit VCBO -30 V Collector-Base V

 7.4. Size:248K  htsemi
 2sb1073.pdf 

2SB1 07 3 TRANSISTOR FEATURES Low collector-emitter saturation voltage VCE(sat) Large peak collector current IC MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -30 V Collector-Base Voltage VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -4 A PC Collector Power Dissipation 0.5 W TJ

 7.5. Size:199K  lge
 2sb1073.pdf 

2SB1073 SOT-89 Transistor(PNP) 1. BASE 2. COLLECTOR SOT-89 1 4.6 B 4.4 2 1.6 3. EMITTER 1.8 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 Low collector-emitter saturation voltage VCE(sat) 0.8 MIN 0.53 Large peak collector current IC 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0 Dimensions in inches and (mil

 7.6. Size:312K  willas
 2sb1073.pdf 

FM120-M WILLAS THRU 2SB1073 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers TRANSISTOR r reverse leakage current and thermal resistance. (PNP) bette SOD-123H SOT-89 Lo FEATURES w profile s

 7.7. Size:716K  kexin
 2sb1073.pdf 

SMD Type Transistors PNP Transistors 2SB1073 Features 1.70 0.1 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VE