Биполярный транзистор 2SB1073R - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1073R
Маркировка: IR
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 120 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hfe): 180
Корпус транзистора: SOT89
2SB1073R Datasheet (PDF)
2sb1073r-q.pdf
MCCMicro Commercial ComponentsTM 2SB1073-Q20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB1073-RPhone: (818) 701-4933Fax: (818) 701-4939Features Low collector to emitter saturation voltage VCE(sat) Silicon Large peak collector current ICP PNP epitaxial planer Mini power type package Lead Free Finish/RoHS Compliant ("P" Suffix desi
2sb1073 e.pdf
Transistor2SB1073Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large peak collector current ICP. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4
2sb1073.pdf
Transistor2SB1073Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large peak collector current ICP. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4
2sb1073.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1073 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Large peak collector current IC 2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 Symbol Parameter Value UnitVCBO -30 VCollector-Base V
2sb1073.pdf
2SB1 07 3TRANSISTORFEATURES Low collector-emitter saturation voltage VCE(sat) Large peak collector current IC MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -30 VCollector-Base Voltage VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -4 A PC Collector Power Dissipation 0.5 W TJ
2sb1073.pdf
2SB1073 SOT-89 Transistor(PNP)1. BASE 2. COLLECTOR SOT-891 4.6B4.42 1.63. EMITTER 1.81.41.43 Features 2.64.252.43.75 Low collector-emitter saturation voltage VCE(sat) 0.8MIN0.53Large peak collector current IC 0.400.480.442x)0.13 B0.35 0.371.5MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0Dimensions in inches and (mil
2sb1073.pdf
FM120-M WILLAS THRU2SB1073 SOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersTRANSISTOR r reverse leakage current and thermal resistance.(PNP) betteSOD-123HSOT-89 LoFEATURES w profile s
2sb1073.pdf
SMD Type TransistorsPNP Transistors2SB1073 Features1.70 0.1 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VE
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050