Биполярный транзистор INC6006AP1 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: INC6006AP1
Маркировка: BF
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 1.7 pf
Статический коэффициент передачи тока (hfe): 72
Корпус транзистора: SOT89
Аналоги (замена) для INC6006AP1
INC6006AP1 Datasheet (PDF)
inc6006ap1.pdf
INC6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO = 160V CE BLow voltage VCE(sat) = 0.2V(MAX) Complementary
inc6006ac1.pdf
INC6006AC1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC6006AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Small package for easy mounting. High voltage VCE
inc6006as1.pdf
PRELIMINARY INC6006AS1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AS1 is a silicon NPN transistor. 4.0 It is designed with high voltage. FEATURE Small package for easy mounting. 0.1 Hi
inc6002ac1.pdf
INC6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR DESCLIPTION OUTLINE DRAWING Unitmm 2.8 INC6002AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. (1)FEATURE Super mini package for easy mounting. (3) (2)Hige voltage VCEO=300V APPLICATION DC/DC convertor, High voltage switching
inc6008ac1.pdf
INC6008AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC6008AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack
inc6008ap1.pdf
PRELIMINARY INC6008AP1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT 4.6 MAX INC6008AP1 is a silicon NPN transistor. 1.51.6It is designed with high voltage. FEATURE Small package for easy mounting
inc6007ap1.pdf
PRELIMINARY INC6007AP1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6007AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting.
inc6005ac1.pdf
INC6005AC1FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC6005AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Super mini package for easy mounting High voltage VCEO=400V APPLICATION DC/DC convertor, High voltage switching Terminal Connector JE
inc6005ap1.pdf
INC6005AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6005AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. CE BHigh voltage VCEO = 400V 0.53 0.4MAX0.48 MAX1.53.0APPLICATION
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: MJE702
History: MJE702
Список транзисторов
Обновления
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