INC5001AP1 - Даташиты. Аналоги. Основные параметры

INC5001AP1 For low frequency power amplify Silicon NPN Epitaxial DESCRIPTION OUTLINE DRAWING UNIT INC5001AP1 is a silicon NPN epitaxial transistor designed for relay 4.6 MAX drive or Power supply application. 1.5 1.6 FEATURE Small package for easy mounting. High voltage VCEO=60V C E B High collector current IC=1A Low VCE(sat) VCE sat =0.25V

INC5004AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC5004AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini

INC5004AP1 PRELIMINARY Notice This is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT INC5004AP1 is a silicon NPN transistor. 4.6 MAX It is designed with high voltage. 1.5 1.6 FEATURE Small package for easy mountin

INC5006AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC5006AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack

PRELIMINARY INC5003AH1 Notice This is not a final specification Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE FEATURE OUTLINE DRAWING UNIT Linearity of hFE is good Low voltage VCE(sat) = 250mV(MAX),Ic=2A 6.60 2.30 Complementary INA5003AH1 5.34 0.50 APPLICATION Motor drive, IGBT drive, DC/DC convertor 1 2 3 0.127

INC5002AP1 For low frequency power amplify Silicon NPN Epitaxial DESCRIPTION OUTLINE DRAWING UNIT INC5002AP1 is a silicon NPN epitaxial transistor designed for relay 4.6 MAX drive or Power supply application. 1.5 1.6 FEATURE Small package for easy mounting. High voltage VCEO=60V C E B High collector current IC=3A Low VCE(sat) VCE sat =0.6V m