INC5006AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC5006AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack

INC5004AC1 PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC5004AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini

INC5004AP1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC5004AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mountin

INC5001AP1 For low frequency power amplify Silicon NPN EpitaxialDESCRIPTION OUTLINE DRAWING UNIT INC5001AP1 is a silicon NPN epitaxial transistor designed for relay 4.6 MAXdrive or Power supply application. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO=60V CE BHigh collector current IC=1A Low VCE(sat) VCEsat=0.25V

PRELIMINARY INC5003AH1 NoticeThis is not a final specification Some parametric are subject to change. SILICON NPN EPITAXIAL TYPEFEATURE OUTLINE DRAWING UNIT Linearity of hFE is good Low voltage VCE(sat) = 250mV(MAX),Ic=2A 6.602.30Complementary INA5003AH1 5.340.50APPLICATION Motor drive, IGBT drive, DC/DC convertor 1 2 30.127

INC5002AP1 For low frequency power amplify Silicon NPN EpitaxialDESCRIPTION OUTLINE DRAWING UNIT INC5002AP1 is a silicon NPN epitaxial transistor designed for relay 4.6 MAXdrive or Power supply application. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO=60V CE BHigh collector current IC=3A Low VCE(sat) VCEsat=0.6V m