INC5006AC1 - Даташиты. Аналоги. Основные параметры

INC5006AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC5006AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack

INC5004AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC5004AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini

INC5004AP1 PRELIMINARY Notice This is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT INC5004AP1 is a silicon NPN transistor. 4.6 MAX It is designed with high voltage. 1.5 1.6 FEATURE Small package for easy mountin

INC5001AP1 For low frequency power amplify Silicon NPN Epitaxial DESCRIPTION OUTLINE DRAWING UNIT INC5001AP1 is a silicon NPN epitaxial transistor designed for relay 4.6 MAX drive or Power supply application. 1.5 1.6 FEATURE Small package for easy mounting. High voltage VCEO=60V C E B High collector current IC=1A Low VCE(sat) VCE sat =0.25V

PRELIMINARY INC5003AH1 Notice This is not a final specification Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE FEATURE OUTLINE DRAWING UNIT Linearity of hFE is good Low voltage VCE(sat) = 250mV(MAX),Ic=2A 6.60 2.30 Complementary INA5003AH1 5.34 0.50 APPLICATION Motor drive, IGBT drive, DC/DC convertor 1 2 3 0.127

INC5002AP1 For low frequency power amplify Silicon NPN Epitaxial DESCRIPTION OUTLINE DRAWING UNIT INC5002AP1 is a silicon NPN epitaxial transistor designed for relay 4.6 MAX drive or Power supply application. 1.5 1.6 FEATURE Small package for easy mounting. High voltage VCEO=60V C E B High collector current IC=3A Low VCE(sat) VCE sat =0.6V m