Биполярный транзистор 2N673 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N673
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 25 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 140 °C
Граничная частота коэффициента передачи тока (ft): 0.5 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO31
2N673 Datasheet (PDF)
2n6716 2n6717 2n6718 2n6728 2n6729 2n6730.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n6732.pdf
PNP SILICON PLANAR2N6732MEDIUM POWER TRANSISTORISSUE 1 MARCH 94 T 8 V I V i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I II i V 8 V I I V I i V V I I
2n6731.pdf
NPN SILICON PLANAR2N6731MEDIUM POWER TRANSISTORISSUE 1 MARCH 94 T 8 V I V i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I II i V 8 V I I V I i V V I I
2n6728 2n6729 2n6730.pdf
PNP SILICON PLANAR 2N67282N6729MEDIUM POWER TRANSISTORS2N6730ISSUE 1 MARCH 94 T V I V i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I
2n6738 2n6739 2n6740.pdf
ABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.com
2n6738.pdf
isc Silicon NPN Power Transistor 2N6738DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed , power switc-hing in inductive circuit , they are particularly suited for
2n6738 2n6739 2n6740.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6738 2N6739 2N6740 DESCRIPTION With TO-220 package High voltage ratings Low collector saturation voltage Fast switching speed APPLICATIONS Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN DESCRIPTION1 Base Co
2n6739.pdf
isc Silicon NPN Power Transistor 2N6739DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed , power switc-hing in inductive circuit , they are particularly suited for
Другие транзисторы... 2N6722 , 2N6723 , 2N6724 , 2N6725 , 2N6726 , 2N6727 , 2N6728 , 2N6729 , KTB688 , 2N6730 , 2N6731 , 2N6732 , 2N6733 , 2N6734 , 2N6735 , 2N6736 , 2N6737 .
