TPCP8G01 TOSHIBA Multi-Chip Device Transistor Silicon PNP Epitaxial TypeField Effect Transistor Silicon P Channel MOS Type TPCP8G01 Unit: mm Switching Applications 0.330.05 0.05 M A8 5 Multi-chip discrete device: PNP Transistor and Channel MOS FET Small footprint due to small and thin package Absolute Maximum Ratings (Ta = 25C) 0.475 1 4B0.05 M

TPCP8G01 TOSHIBA Multi-Chip Device Transistor Silicon PNP Epitaxial TypeField Effect Transistor Silicon P Channel MOS Type TPCP8G01 Unit: mm Switching Applications 0.330.05 0.05 M A8 5 Multi-chip discrete device: PNP Transistor and Channel MOS FET Small footprint due to small and thin package Absolute Maximum Ratings (Ta = 25C) 0.475 1 4B0.05 M

TPCP8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS) TPCP8404 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05 Low drain-source ON-resistance : P Channel RDS (ON) = 38 m(typ.) 0.05 M A8 5(VGS=-10V) N Channel RDS (ON) = 38 m(typ.) VGS=10V) High forward transfer admittance : P Channel |Yfs

TPCP8603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8603 High-Speed Switching Applications Unit: mmDC/DC Converters 0.330.05 0.05 M A8 5Strobe Applications High DC current gain: hFE = 120300 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) 0.475 1 4B0.05 M B0.65 High-speed switching: tf = 120 ns (typ.) 2.9

TPCP8204TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCP8204 Portable Equipment Applications Motor Drive Applications Unit: mm Small footprint due to small and thin package 0.330.05 Low drain-source ON resistance: RDS (ON) = 38 m (typ.) M A 0.058 5VGS=10V High forward transfer admittance:|Yfs| = 8 S (typ.) Low leakage

TPCP8604 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type TPCP8604 High-Voltage Switching Applications Unit: mm0.330.05High breakdown voltage: VCEO = -400 V 0.05 M A8 5Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit0.475 1 4BCollector-base voltage VCBO -400 V0.05 M B0.65Collector-emitter voltage VCEO -400 V 2.90.1AEmitte

TPCP8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCP8004 Notebook PC Applications Unit: mmPortable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High speed switching Small gate charge: Qg = 26nC (typ.) 0.475 1 4 B M 0.05 B 0.65 Low drain-source ON-resistance:

TPCP8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCP8102 Notebook PC Applications Unit: mmPortable Equipment Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 13.5 m (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current:

TPCP8111MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8111TPCP8111TPCP8111TPCP81111. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge: QSW = 5.2 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 90 m (typ.) (VGS = -10 V)

TPCP8013MOSFETs Silicon N-channel MOS (U-MOS)TPCP8013TPCP8013TPCP8013TPCP80131. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge : QSW = 4.5 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 41.5 m (typ.) (VGS = 10 V

TPCP8J01 TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type TPCP8J01 Notebook PC Applications Portable Equipment Applications Unit: mm0.330.05 Lead(Pb)-Free 0.05 M A8 5 Small mounting area due to small and thin package Low drain-source ON resistance: P Channel RDS (ON) = 27 m (typ.) High forward transfer admitt

TPCP8305MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8305TPCP8305TPCP8305TPCP83051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 23 m (typ.) (VG

TPCP8109MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8109TPCP8109TPCP8109TPCP81091. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge: QSW = 5.8 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 40.3 m (typ.) (VGS = -10 V

TPCP8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8006 Notebook PC Applications Portable Equipment Applications Unit: mm0.33 0.05 M 0.05 A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance: RDS (ON) = 6.5 m (typ.) High forward transfer admittance:|Yfs| = 36 S (typ.) Low leakage curr

TPCP8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCP8302 Unit: mmLithium Ion Battery Applications 0.330.05Notebook PC Applications 0.05 M A 8 5Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 m (typ.) 0.475 1 4 High forward transfer admittance: |Yfs

TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Unit: mmLithium Ion Battery Applications 0.330.05Notebook PC Applications 0.05 M A 8 5Portable Equipment Applications Low drain-source ON-resistance: RDS(ON) = 41 m (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) 0.475 1 4 Low leakage current: IDSS = -10

TPCP8405MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPCP8405TPCP8405TPCP8405TPCP84051. Applications1. Applications1. Applications1. Applications Cell Phones Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistanceP-channel RDS(ON) = 24 m (typ.) (VGS = -10 V), N-channel RDS(ON) = 20 m (typ.) (VGS = 10 V)

TPCP8J01 TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type TPCP8J01 Notebook PC Applications Portable Equipment Applications Unit: mm0.330.05 Lead(Pb)-Free 0.05 M A 8 5 Small mounting area due to small and thin package Low drain-source ON resistance: P Channel RDS (ON) = 27 m (typ.) High forward transfer admit

TPCP8010MOSFETs Silicon N-channel MOS (U-MOS)TPCP8010TPCP8010TPCP8010TPCP80101. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge : QSW = 4.9 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 19.1 m (typ.) (VGS = 10 V

TPCP8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCP8A05-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mm0.330.05Portable Equipment Applications 0.05 M A8 5 Built-in a Schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching0.475

TPCP8207MOSFETs Silicon N-channel MOS (U-MOS)TPCP8207TPCP8207TPCP8207TPCP82071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Small gate charge : QSW = 4.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) =

TPCP8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCP8003-H High Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M A8 5Portable Equipment Applications Small footprint due to a small and thin package 0.475 1 4 High speed switching B0.05 M B0.65 Small gate charge:

TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A8 5 High DC current gain : hFE = 100 to 300 (IC = 0.3 A) Low collector-emitter saturation : VCE (sat) = 0.2 V (max) High-speed switching : tf = 100 ns (typ.) 0.475 1 4B0.05 M B0.65Absolute Maximum Ratings (Ta =

TPCP8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8403 Portable Equipment Applications Motor Drive Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A 8 5 Lead(Pb)-Free Low drain-source ON resistance : P Channel RDS (ON) = 55 m (typ.) N Channel RDS (ON) = 31 m (typ.) High forward trans

TPCP8407MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS )TPCP8407TPCP8407TPCP8407TPCP84071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low gate chargeN-channel MOSFET: QSW = 4.7 nC (typ.)P-channel MOSFET: QSW = 5.5 nC (typ.)(3) Lo

TPCP8510 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8510 Unit: mmHigh-Speed, High-Voltage Switching Applications 0.330.05DC-DC Converter Applications 0.05 M A8 5 High DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max) 0.475 1 4 High-speed switching: tf = 0.2 s (typ) B0.05 M B0.652.90.1

TPCP8105MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8105TPCP8105TPCP8105TPCP81051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 13.8 m (typ.) (VGS = -4.5

TPCP8103-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCP8103-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M A8 5Portable Equipment Applications CCFL Inverter Applications 0.475 1 4B Small footprint due to a small and thin package 0.05 M B0.652.90.1 High spe

TPCP8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCP8301 Lithium Ion Battery Applications Unit: mmNotebook PC Applications 0.330.05Portable Equipment Applications 0.05 M A 8 5 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 m (typ.) High forward transfer admittan

TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm Swtching Applications 0.330.05 0.05 M A Load Switch Applications 8 5 Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive 0.475 1 4B0.05 M B High DC current gain: hFE = 20

TPCP8511Bipolar Transistors Silicon NPN Epitaxial TypeTPCP8511TPCP8511TPCP8511TPCP85111. Applications1. Applications1. Applications1. Applications High-Speed Switching DC-DC Converters Photo Flashes2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 250 to 400 (IC = 0.3 A)(2) Low collector-emitter saturation: VCE(sat) = 0.18 V

TPCP8106MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8106TPCP8106TPCP8106TPCP81061. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =

TPCP8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8005-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M APortable Equipment Applications 8 5 Small footprint due to a small and thin package High-speed switching 0.475 1 4B0.05 M B0.65 Small gate charge: QSW = 5.0 nC (typ.

TPCP8107MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8107TPCP8107TPCP8107TPCP81071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge: QSW = 14.0 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 13.9 m (typ.) (VGS = -10

TPCP8902 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8902 Portable Equipment Applications Unit: mmSwitching Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package High DC current gain : PNP hFE = 200 to 500 (IC = -0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A) 0.475 1 4B0.05 M B Low collector-emitter satura

TPCP8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCP8201 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC-DC Converter Applications 0.05 M A8 5 Lead(Pb)-Free Low drain-source ON resistance : RDS (ON) = 38 m (typ.) High forward transfer admittance 0.475 1 4B 0.05 M B0.65:|Yfs| = 7.0 S

TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A8 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) 0.475 1 4B0.05 M B0.65Absolu

TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS / -MOS ) TPCP8401 Switching Regulator Applications Load Switch Applications Unit: mm0.330.05 Lead(Pb)-Free 0.05 M A 8 5 Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive Small footprint due to small and thin pack

TPCP8406MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPCP8406TPCP8406TPCP8406TPCP84061. Applications1. Applications1. Applications1. Applications Cell Phones Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistanceP-channel RDS(ON) = 33 m (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 m (typ.) (VGS = 10 V)

TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit: mmDC/DC Converters 0.330.05 0.05 M A8 5 High DC current gain: hFE = 120~300 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max) High-speed switching: tf = 0.2 s (typ.) 0.475 1 4B 0.05 M B0.652.90.1Absolute Maximum

TPCP8601 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TPCP8601 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A8 5Strobo Flash Applications High DC current gain: hFE = 200 to 500 (IC = -0.6 A) Low collector-emitter saturation: VCE (sat) = -0.19 V (max) 0.475 1 4B High-speed switching: tf = 35 ns (typ.

TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 0.330.05 0.05 M ASTROBE FLASH APPLICATIONS 8 5HIGH-SPEED SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 0.475 1 4BMulti-chip discrete device; built-in NPN transistor for main switch and 0.05 M B0.65N-ch MOS FET for drive 2.9

TPCP8203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCP8203 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC/DC Converters 0.05 M A8 5 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 31 m (typ.) 0.475 1 4 High forward transfer admittance: |

TPCP8902 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8902 Portable Equipment Applications Unit: mmSwitching Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package High DC current gain : PNP hFE = 200 to 500 (IC = -0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A) 0.475 1 4B0.05 M B Low collector-emitter satura

TPCP8701 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8701 Portable Equipment Applications Unit: mmSwitching Applications 0.330.05 0.05 M A8 5Inverter Lighting Applications Small footprint due to small and thin package High DC current gain : hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation : VCE (sat) = 0.14 V (max) 0.475 1 4B 0.05

TPCP8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8007-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 40 m (typ.)

TPCP8002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8002 Notebook PC Applications Portable Equipment Applications Unit: mm0.330.05 Lead (Pb)-Free 0.05 M A8 5 Small footprint due to small and thin package Low drain-source ON-resistance : RDS (ON) = 7 m (typ.) High forward transfer admittance 0.475 1 4B:|Yfs| = 36 S

TPCP8901 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Unit: mmSwitching Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package High DC current gain : PNP hFE = 200 to 500 (IC = -0.1 A) :NPN hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation : PNP VCE (sat) =

TPCP8901 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Unit: mmSwitching Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package High DC current gain : PNP hFE = 200 to 500 (IC = -0.1 A) :NPN hFE = 400 to 1000 (IC = 0.1 A) 0.475 1 4B0.05 M B Low collector-emitter satur

TPCP8011MOSFETs Silicon N-channel MOS (U-MOS)TPCP8011TPCP8011TPCP8011TPCP80111. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge : QSW = 4.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 25.5 m (typ.) (VGS = 10 V

TPCP8205-HMOSFETs Silicon N-Channel MOS (U-MOS)TPCP8205-HTPCP8205-HTPCP8205-HTPCP8205-H1. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Low drain-source on-resistance: RDS(ON) = 20 m

TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A58 High DC current gain : hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation : VCE (sat) = 0.12 V (max) High-speed switching : tf = 25 ns (typ.) 0.475 1 4B 0.05 M B0.65 2.90.1A0

TPCP8110MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8110TPCP8110TPCP8110TPCP81101. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge: QSW = 14 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 30.4 m (typ.) (VGS = -10 V)

TPCP8602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8602 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A8 5Strobe Flash Applications High DC current gain: hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation: VCE (sat) = -0.2 V (max) 0.475 1 4 High-speed switching: tf = 90 ns (typ.) B0.05 M B

TPCP8009MOSFETs Silicon N-channel MOS (U-MOS)TPCP8009TPCP8009TPCP8009TPCP80091. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge : QSW = 9.6 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 9.5 m (typ.) (VGS = 10 V)

TPCP8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8008-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.8 nC (typ.) Low drain-sour

TPCP8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8402 Portable Equipment Applications Mortor Drive Applications Unit: mm DC-DC Converter Applications Low drain-source ON resistance : P Channel R = 60 m (typ.) DS (ON) N Channel R = 38 m (typ.) DS (ON) High forward transfer admittance : P Channel |Y | = 6.0

TPCP8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TENTATIVE TPCP8001-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications 0.330.05Portable Equipment Applications M+0.05 A Small footprint due to small and thin package High speed switching 0.170.02B0.330.05 0.05M B

TPCP8306MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8306TPCP8306TPCP8306TPCP83061. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 47 m (typ.) (VGS = -4.5 V)(3) Low leakage

TPCP8012MOSFETs Silicon N-channel MOS (U-MOS)TPCP8012TPCP8012TPCP8012TPCP80121. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge : QSW = 10 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 16.2 m (typ.) (VGS = 10 V)

TPCP8H01 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H01 HIGH-SPEED SWITCHING APPLICATIONS 0.330.05 0.05 M A8 5LORD SWITCHING APPLICATIONS STROBE FLASH APPLICATIONS Multi-chip discrete device; built-in NPN transistor for main switch and 0.475 1 4BN-ch MOS FET for drive 0.05 M B0.65Hig

TPCP8202 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV) TPCP8202 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC-DC Converters 0.05 M A8 5 Lead(Pb)-Free Low drain-source ON-resistance: RDS(ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 20 S (typ.) 0.475 1 4B Low leakage current: IDSS = 1

TPCP8206MOSFETs Silicon N-Channel MOS (U-MOS)TPCP8206TPCP8206TPCP8206TPCP82061. Applications1. Applications1. Applications1. Applications Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 19 m (typ.) (VGS = 4.5 V)(3) Low leakage current: IDSS = 1

TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCP8101 Notebook PC Applications Portable Equipment Applications Unit: mm0.330.05 0.05 M A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance: RDS (ON) = 24 m (typ.) ( VGS = -4.5 V) High forward transfer admittance: |Yfs| = 14 S (typ.) Low l

SMD Type MOSFETTransistorsSilicon P,N Channel MOSFETTPCP84040.330.05 Features 2-3V1G0.05 M A8 5 Low drain-source ON-resistance:P Channel RDS(ON) = 38m (typ.)(VGS=-10V)N Channel RDS(ON) = 38m (typ.)(VGS=10V) High forward transfer admittance:0.475 1 4B0.05 M B0.65P Channel |Yfs| = 7.3S (typ.)2.90.1AN Channel |Yfs| = 8S (typ.)0.80.05 Low leakage curr