KTC4347. Аналоги и основные параметры
Наименование производителя: KTC4347
Маркировка: CO_CY
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 120 MHz
Ёмкость коллекторного перехода (Cc): 30 pf
Статический коэффициент передачи тока (hFE): 80
Корпус транзистора: SOT89
Аналоги (замена) для KTC4347
- подборⓘ биполярного транзистора по параметрам
KTC4347 даташит
ktc4347.pdf
RoHS KTC4347 SOT-89 KTC4373 TRANSISTOR (NPN) 1. BASE FEATURES Power dissipation 2. COLLECTOR 1 PCM 500 mW (Tamb=25 ) 2 3. EMITTER 3 Collector current ICM 800 mA Collector-base voltage V(BR)CBO 120 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
ktc4377.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4377 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Curr
ktc4373.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4373 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Voltage Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V
ktc4375.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4375 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO 30 V Collector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Colle
ktc4376.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4376 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Current Application 3. EMITTER Complementary to KTA1664 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-E
ktc4370a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO 220F KTC4370A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Transition Frequency Complementary to KTA1659A 3. EMITTER High Voltage Application Equivalent Circuit KTC4370A=Device code Solid dot=Green moldinn compound device, if none,the normal device XXXX=Code
ktc4374.pdf
JJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4374 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package General Purpose Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEB
ktc4379.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4379 TRANSISTOR (NPN) 1. BASE FEATURES Low saturation voltage 2. COLLECTOR High speed switching time Complementary to KTA1666 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Co
ktc4378.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4378 TRANSISTOR (NPN) 1. BASE FEATURES High voltage 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO 80 V Collector-Base Voltage VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Coll
ktc4377.pdf
SEMICONDUCTOR KTC4377 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A C FEATURES H High DC Current Gain and Excellent hFE Linearity G hFE(1)=140 600(VCE=1V, IC=0.5A) hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A). DIM MILLIMETERS Low Saturation Voltage A 4.70 MAX D _ + D B 2.50 0.20 VCE(sat)=0.5V(Max.) (IC=2A, IB=50mA).
ktc4373.pdf
SEMICONDUCTOR KTC4373 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES A C High Voltage VCEO=120V. H High Transition Frequency fT=120MHz(Typ.). G 1W(Monunted on Ceramic Substrate). Small Flat Package. DIM MILLIMETERS Complementary to KTA1661. A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 F F E 4.25 MAX _ + F 1.50 0.10
ktc4380.pdf
SEMICONDUCTOR KTC4380 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION FEATURES High Voltage VCEO=160V. A C Large Continuous Collector Current Capability. H Recommended for LED Drive Application. G DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX D D D 0.45+0.15/-0.10 K E 4.25 MAX _ + F F F 1.50 0.10 G 0.40 TYP MAXIMUM RATING (Ta=25
ktc4375.pdf
SEMICONDUCTOR KTC4375 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES 1W (Mounted on Ceramic Substrate). A C Small Flat Package. H Complementary to KTA1663. L G M DIM MILLIMETERS A 4.70 MAX N _ + B 2.50 0.20 C 1.70 MAX D D MAXIMUM RATING (Ta=25 ) D 0.45+0.15/-0.10 K E 4.25 MAX _ + CHARACTERISTIC SYMBOL RATING UNIT F F F 1.50
ktc4376.pdf
SEMICONDUCTOR KTC4376 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTA1664. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT G 0.40 TYP
ktc4370 ktc4370a.pdf
SEMICONDUCTOR KTC4370/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A C FEATURES DIM MILLIMETERS S High Transition Frequency fT=100MHz(Typ.). _ A 10.0 + 0.3 _ + B 15.0 0.3 E Complementary to KTA1659/A. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (T
ktc4374.pdf
SEMICONDUCTOR KTC4374 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTA1662. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT G 0.40
ktc4379.pdf
SEMICONDUCTOR KTC4379 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. A C FEATURES H Low Saturation Voltage G VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time tstg=1.0 S(Typ.) DIM MILLIMETERS PC=1 2W (Mounted on Ceramic Substrate) A 4.70 MAX D _ + D B 2.50 0.20 Small Flat Package. K C 1.70 MAX D 0.45+0.15/
ktc4370 a.pdf
SEMICONDUCTOR KTC4370/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A C FEATURES DIM MILLIMETERS S High Transition Frequency fT=100MHz(Typ.). _ A 10.0 + 0.3 _ + B 15.0 0.3 E Complementary to KTA1659/A. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (T
ktc4378.pdf
SEMICONDUCTOR KTC4378 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE A C FEATURES H High Voltage VCEO=60V(Min.). G High Current IC(Max.)=1A. High Transition Frequency fT=150MHz (Typ.). DIM MILLIMETERS Wide Area of Safe Operation. A 4.70 MAX D _ + D B 2.50 0.20 Complementary to KTA1668. K C 1.70 MAX D 0.
ktc4372.pdf
SEMICONDUCTOR KTC4372 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. FEATURES A C High Voltage VCEO=150V. H High Transition Frequency fT=120MHz(Typ.). G 1W (Monunted on Ceramic Substrate). Small Flat Package. DIM MILLIMETERS Complementary to KTA1660. A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 F F E 4.25 MAX _ + F
ktc4369.pdf
SEMICONDUCTOR KTC4369 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Good Linearity of hFE. _ A 10.0 + 0.3 _ + B 15.0 0.3 E Complementary to KTA1658. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (Ta=25 ) R K _ 3.7 0
ktc4377.pdf
KTC4377 SOT-89 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 0.5 W TJ Junction Tempera
ktc4373.pdf
KTC4373 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Small Flat Package High Voltage Application 2. COLLECTOR High Voltage 3. EMITTER High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800
ktc4375.pdf
KTC4375 TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO 30 V Collector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temp
ktc4376.pdf
KTC4376 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Current Application 2. COLLECTOR Complementary to KTA1664 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector
ktc4374.pdf
KTC4374 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Small Flat Package General Purpose Application 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 400 mA PC Collector Power Dissipation 500 mW
ktc4379.pdf
KTC4379 TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Low saturation voltage High speed switching time 2. COLLECTOR 1 Complementary to KTA1666 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Con
ktc4378.pdf
KTC4378 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES High voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO 80 V Collector-Base Voltage VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Dissipation 0.5 W TJ Junction Temperature
ktc4372.pdf
KTC4372 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Voltage Switching Application 2. COLLECTOR High Voltage High Transition Frequency 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Cur
ktc4375 sot-89.pdf
KTC4375 SOT-89 Transistor(NPN) 1. BASE SOT-89 1 2. COLLECTOR 4.6 2 B 4.4 1.6 1.8 3. EMITTER 1.4 3 1.4 2.6 4.25 Features 2.4 3.75 0.8 Low voltage MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO 30 V Collector-Base Voltage
ktc4377 sot-89.pdf
KTC4377 SOT-89 Transistor(NPN) 1. BASE 1 SOT-89 2. COLLECTOR 2 4.6 B 4.4 1.6 3. EMITTER 1.8 3 1.4 1.4 Features 2.6 4.25 2.4 3.75 Low voltage 0.8 MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.5 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 30 V VCEO C
ktc4378 sot-89.pdf
KTC4378 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 3. EMITTER 1.6 2 1.8 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 High voltage 0.8 MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO 80 V Collector-Base Voltage
ktc4379 sot-89.pdf
KTC4379 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 2 4.4 3. EMITTER 1.6 1.8 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 Low saturation voltage 0.8 MIN 0.53 High speed switching time 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 Complementary to KTA1666 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimete
ktc4377.pdf
KTC4377 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features SOT-89 * Low saturation voltage, VCE(sat) 0.5V@2A/50mA * Excellent DC current gain characteristics. Mechanical Data * Case Molded Plastic ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit VCBO 30 V Collector-Base Voltage VCEO 10 V Collector-Emitter Voltage V
ktc4375.pdf
KTC4375 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit VCBO 30 V Collector-Base Voltage VCEO 30 V Collector-Emitter Voltage V VEBO 5 Emitter-Base Voltage IC Collector Current-Continuous 1.5 A PC 0.5 W Collector Power Disspation Junction Temperature TJ 150 C -55 to 150
ktc4379.pdf
KTC4379 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit VCBO 50 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage V VEBO 5 Emitter-Base Voltage IC Collector Current-Continuous 2.0 A PC 0.5 W Collector Power Disspation Junction Temperature TJ 150 C -55 to 150
ktc4375.pdf
KTC4375 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , KTA1663 Small flat package, complementary to KTA1663. / Applications High current application. / Equivalent Circuit
ktc4373.pdf
SMD Type Transistors NPN Transistors KTC4373 1.70 0.1 Features High Voltage Switching Application High Voltage High Transition Frequency 0.42 0.1 0.46 0.1 Comlementary to KTA1661 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Em
ktc4375.pdf
SMD Type Transistors NPN Transistors KTC4375 1.70 0.1 Features Low voltage Comlementary to KTA1663 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1.5 A Colle
ktc4376.pdf
SMD Type Transistors NPN Transistors KTC4376 1.70 0.1 Features 1W (Mounted on Ceramic Substrate) Small Flat Package Complementary to KTA1664 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5
ktc4370a.pdf
DIP Type Transistors NPN Transistors KTC4370A Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features High Transition Frequency Complementary to KTA1659A 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 1
ktc4379.pdf
SMD Type Transistors NPN Transistors KTC4379 1.70 0.1 Features Low saturation voltage High speed switching time Complementary to KTA1666 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Co
ktc4378.pdf
SMD Type Transistors NPN Transistors KTC4378 1.70 0.1 Features High Voltage and High fT High Current Complementary to KTA1668 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 5 Collector Cur
ktc4372.pdf
SMD Type Transistors NPN Transistors KTC4372 1.70 0.1 Features High Voltage Switching Application High Voltage 0.42 0.1 High Transition Frequency 0.46 0.1 Comlementary to KTA1660 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 150 V Emi
ktc4370.pdf
DIP Type Transistors NPN Transistors KTC4370 Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features High Transition Frequency Complementary to KTA1659 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160
ktc4375o ktc4375y.pdf
KTC4375 NPN Plastic-Encapsulate Transistors Encapsulate Transistors FEATURES Low voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit SOT-89 VCBO 30 V Collector-Base Voltage 1. BASE 2. COLLECTOR 3. EMITTER VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation
ktc4373y.pdf
KTC4373Y NPN-General use transistor 1W 1A 80V Applications Can be used for switching and amplifying in various electrical and electronic equipments. SOT-89 4 Circuit MARKING 1 2 3 CY Max ratings Parameters Symbol Rating Unit VCEO 80 V Collector emitter voltage IB=0 VCBO 100 V Collector base voltage IE=0 VEBO 5 V Emitter base voltage IC=0 I
ktc4370a.pdf
isc Silicon NPN Power Transistor KTC4370A DESCRIPTION High Collector-Emitter Breakdown Voltage V = 180V(Min) CEO Complement to Type KTA1659A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 180 V CBO
ktc4370.pdf
isc Silicon NPN Power Transistor KTC4370 DESCRIPTION High Collector-Emitter Breakdown Voltage V = 160V(Min) CEO Complement to Type KTA1659 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 160 V CBO
Другие транзисторы: KTC3875LT1, KTC3875-Y, KTC3876-GR, KTC3876-Y, KTC4075-BL, KTC4075-GR, KTC4075-O, KTC4075-Y, TIP35C, KTC4373-O, KTC4373-Y, T03N100GP, T10N60GP, T11, TFH1036, TFH1037, TFH2411
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