JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4373 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Voltage Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 120 V

SEMICONDUCTOR KTC4373TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.FEATURESACHigh Voltage : VCEO=120V.HHigh Transition Frequency : fT=120MHz(Typ.).G1W(Monunted on Ceramic Substrate).Small Flat Package.DIM MILLIMETERSComplementary to KTA1661.A 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10F FE 4.25 MAX_+F 1.50 0.10

KTC4373TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Small Flat Package High Voltage Application 2. COLLECTOR High Voltage3. EMITTER High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800

SMD Type TransistorsNPN TransistorsKTC43731.70 0.1 Features High Voltage Switching Application High Voltage High Transition Frequency0.42 0.10.46 0.1 Comlementary to KTA16611.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Em

KTC4373YNPN-General use transistor1W 1A 80V ApplicationsCan be used for switching and amplifying in various electrical and electronic equipments. SOT-894Circuit MARKING 1 2 3 CYMax ratings Parameters Symbol RatingUnit VCEO 80 VCollectoremitter voltageIB=0 VCBO 100 VCollectorbase voltageIE=0 VEBO 5 VEmitter base voltageIC=0 I